Silicon RF-GCMOS IC technology for RF mixed-mode wireless applications

A submicron silicon Radio Frequency Graded-Channel MOS (RF-GCMOS) IC technology has been developed for wireless communication applications. The technology is based on a low power, low cost GCMOS VLSI technology with fully integrated passive components and optimized GC-MOSFETs for RF mixed-mode opera...

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Hauptverfasser:	Jun Ma, Dan-Bin Liang, Ngo, D., Spears, E., Yeung, B., Courson, B., Spooner, D., Lamey, D., Alvarez, J., Teraji, T., Ford, J., Sunny Cheng
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Application specific integrated circuits CMOS technology Costs Immune system Implants Integrated circuit technology Radio frequency Radiofrequency integrated circuits Silicon Very large scale integration
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Beschreibung
Zusammenfassung:	A submicron silicon Radio Frequency Graded-Channel MOS (RF-GCMOS) IC technology has been developed for wireless communication applications. The technology is based on a low power, low cost GCMOS VLSI technology with fully integrated passive components and optimized GC-MOSFETs for RF mixed-mode operations. For the first time, excellent RF and mixed-mode performance is demonstrated by the highly integrated RF GCMOS technology. The results show that this technology is most promising for battery-powered system-on-a-chip applications.
ISSN:	0149-645X 2576-7216
DOI:	10.1109/MWSYM.1997.604536