CMOS 3D image sensor based on pulse modulated time-of-flight principle and intrinsic lateral drift-field photodiode pixels
Design and measurement results of a CMOS 128 × 96 pixel sensor are presented, which can be used for three-dimensional (3D) scene reconstruction applications based on indirect time-of-flight (ToF) principle enabled by pulse modulated active laser illumination. The 40μm pitch pixels are based on the n...
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| creator | Spickermann, A. Durini, D. Suss, A. Ulfig, W. Brockherde, W. Hosticka, B. J. Schwope, S. Grabmaier, A. |
| description | Design and measurement results of a CMOS 128 × 96 pixel sensor are presented, which can be used for three-dimensional (3D) scene reconstruction applications based on indirect time-of-flight (ToF) principle enabled by pulse modulated active laser illumination. The 40μm pitch pixels are based on the novel intrinsic lateral drift-field photodiode (LDPD) that allows for a 30ns complete charge transfer from the photoactive area into the readout node, and accumulation of signal charge over several readout cycles for extended signal-to-noise ratio (SNR). Distance measurements have been performed using a specially developed camera system. |
| doi_str_mv | 10.1109/ESSCIRC.2011.6044927 |
| format | Conference Proceeding |
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J.</creatorcontrib><creatorcontrib>Schwope, S.</creatorcontrib><creatorcontrib>Grabmaier, A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Spickermann, A.</au><au>Durini, D.</au><au>Suss, A.</au><au>Ulfig, W.</au><au>Brockherde, W.</au><au>Hosticka, B. J.</au><au>Schwope, S.</au><au>Grabmaier, A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>CMOS 3D image sensor based on pulse modulated time-of-flight principle and intrinsic lateral drift-field photodiode pixels</atitle><btitle>2011 Proceedings of the ESSCIRC (ESSCIRC)</btitle><stitle>ESSCIRC</stitle><date>2011-09</date><risdate>2011</risdate><spage>111</spage><epage>114</epage><pages>111-114</pages><issn>1930-8833</issn><eissn>2643-1319</eissn><isbn>9781457707032</isbn><isbn>1457707039</isbn><eisbn>1457707047</eisbn><eisbn>9781457707025</eisbn><eisbn>9781457707049</eisbn><eisbn>1457707020</eisbn><abstract>Design and measurement results of a CMOS 128 × 96 pixel sensor are presented, which can be used for three-dimensional (3D) scene reconstruction applications based on indirect time-of-flight (ToF) principle enabled by pulse modulated active laser illumination. The 40μm pitch pixels are based on the novel intrinsic lateral drift-field photodiode (LDPD) that allows for a 30ns complete charge transfer from the photoactive area into the readout node, and accumulation of signal charge over several readout cycles for extended signal-to-noise ratio (SNR). Distance measurements have been performed using a specially developed camera system.</abstract><pub>IEEE</pub><doi>10.1109/ESSCIRC.2011.6044927</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1930-8833 |
| ispartof | 2011 Proceedings of the ESSCIRC (ESSCIRC), 2011, p.111-114 |
| issn | 1930-8833 2643-1319 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Cameras CMOS integrated circuits Electric potential Image sensors Measurement by laser beam Photodiodes Three dimensional displays |
| title | CMOS 3D image sensor based on pulse modulated time-of-flight principle and intrinsic lateral drift-field photodiode pixels |
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