A compact NBTI model for accurate analog integrated circuit reliability simulation

Negative Bias Temperature Instability (NBTI) is one of the most important reliability concerns in nanometer CMOS technologies. Accurate models for aging effects such as NBTI can help a designer in determining and improving circuit lifetime. This paper proposes a comprehensible compact model for reli...

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Bibliographische Detailangaben

Hauptverfasser:	Maricau, E., Leqi Zhang, Franco, J., Roussel, P., Groeseneken, G., Gielen, G.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier processes Integrated circuit modeling Mathematical model Semiconductor device modeling Stress Temperature measurement Transistors
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