A sub-ns time-gated CMOS single photon avalanche diode detector for Raman spectroscopy

A time-gated single photon avalanche diode (SPAD) has been designed and fabricated in a standard high voltage 0.35 μm CMOS technology for Raman spectroscopy. The sub-ns time gating window is used to suppress the fluorescence background typical of Raman studies, and also to minimize the dark count ra...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Nissinen, I., Nissinen, J., Lansman, A., Hallman, L., Kilpela, A., Kostamovaara, J., Kogler, M., Aikio, M., Tenhunen, J.
Format:	Tagungsbericht
Sprache:	eng ; jpn
Schlagworte:	Cathodes CMOS integrated circuits Fluorescence Logic gates Measurement by laser beam Photonics Raman scattering
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!