Capacitance Compact Model for Ultrathin Low-Electron-Effective-Mass Materials
We present a compact model to calculate the capacitance of undoped high-mobility low-density-of-states materials in double-gate device architecture. Analytical equations for estimating the subband energies, while taking the effect of wavefunction penetration into the gate oxide and the effective mas...
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| Veröffentlicht in: | IEEE transactions on electron devices 2011-12, Vol.58 (12), p.4204-4211 |
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| container_end_page | 4211 |
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| container_issue | 12 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 58 |
| creator | Mudanai, S. Roy, A. Kotlyar, R. Rakshit, T. Stettler, M. |
| description | We present a compact model to calculate the capacitance of undoped high-mobility low-density-of-states materials in double-gate device architecture. Analytical equations for estimating the subband energies, while taking the effect of wavefunction penetration into the gate oxide and the effective mass discontinuity, are presented for the first time in a compact modeling framework. The surface potential equation for a two subband system is solved, assuming Fermi-Dirac statistics, and compared to numerical Schrodinger-Poisson simulations. The importance of accurately treating the charge profile distribution is illustrated, and an analytical expression for the effective oxide thickness to model the charge centroid is developed. |
| doi_str_mv | 10.1109/TED.2011.2168529 |
| format | Article |
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Analytical equations for estimating the subband energies, while taking the effect of wavefunction penetration into the gate oxide and the effective mass discontinuity, are presented for the first time in a compact modeling framework. The surface potential equation for a two subband system is solved, assuming Fermi-Dirac statistics, and compared to numerical Schrodinger-Poisson simulations. 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(IEEE) Dec 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-3932800a0e00403b3a9729d67c09a847038749ffd5bb6282508525fa01e96dd53</citedby><cites>FETCH-LOGICAL-c320t-3932800a0e00403b3a9729d67c09a847038749ffd5bb6282508525fa01e96dd53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6035965$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6035965$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25376505$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Mudanai, S.</creatorcontrib><creatorcontrib>Roy, A.</creatorcontrib><creatorcontrib>Kotlyar, R.</creatorcontrib><creatorcontrib>Rakshit, T.</creatorcontrib><creatorcontrib>Stettler, M.</creatorcontrib><title>Capacitance Compact Model for Ultrathin Low-Electron-Effective-Mass Materials</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We present a compact model to calculate the capacitance of undoped high-mobility low-density-of-states materials in double-gate device architecture. Analytical equations for estimating the subband energies, while taking the effect of wavefunction penetration into the gate oxide and the effective mass discontinuity, are presented for the first time in a compact modeling framework. The surface potential equation for a two subband system is solved, assuming Fermi-Dirac statistics, and compared to numerical Schrodinger-Poisson simulations. The importance of accurately treating the charge profile distribution is illustrated, and an analytical expression for the effective oxide thickness to model the charge centroid is developed.</description><subject>Applied sciences</subject><subject>Compact model</subject><subject>density of states (DOS)</subject><subject>Effective mass</subject><subject>Electronics</subject><subject>Equations</subject><subject>Exact sciences and technology</subject><subject>III-V</subject><subject>Logic gates</subject><subject>Mathematical model</subject><subject>Numerical simulation</subject><subject>Quantum capacitance</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mudanai, S.</creatorcontrib><creatorcontrib>Roy, A.</creatorcontrib><creatorcontrib>Kotlyar, R.</creatorcontrib><creatorcontrib>Rakshit, T.</creatorcontrib><creatorcontrib>Stettler, M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mudanai, S.</au><au>Roy, A.</au><au>Kotlyar, R.</au><au>Rakshit, T.</au><au>Stettler, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Capacitance Compact Model for Ultrathin Low-Electron-Effective-Mass Materials</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2011-12-01</date><risdate>2011</risdate><volume>58</volume><issue>12</issue><spage>4204</spage><epage>4211</epage><pages>4204-4211</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We present a compact model to calculate the capacitance of undoped high-mobility low-density-of-states materials in double-gate device architecture. Analytical equations for estimating the subband energies, while taking the effect of wavefunction penetration into the gate oxide and the effective mass discontinuity, are presented for the first time in a compact modeling framework. The surface potential equation for a two subband system is solved, assuming Fermi-Dirac statistics, and compared to numerical Schrodinger-Poisson simulations. The importance of accurately treating the charge profile distribution is illustrated, and an analytical expression for the effective oxide thickness to model the charge centroid is developed.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2011.2168529</doi><tpages>8</tpages></addata></record> |
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| subjects | Applied sciences Compact model density of states (DOS) Effective mass Electronics Equations Exact sciences and technology III-V Logic gates Mathematical model Numerical simulation Quantum capacitance Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Capacitance Compact Model for Ultrathin Low-Electron-Effective-Mass Materials |
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