PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering
We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 /spl mu/m-thick thin films were completely crystallized into the perovskite phase at 500/spl deg/C for 60 min in...
Gespeichert in:
| Hauptverfasser: | , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 454 vol.1 |
|---|---|
| container_issue | |
| container_start_page | 451 |
| container_title | |
| container_volume | 1 |
| creator | Lu, D.X. Pun, E.Y.B. Zhang, Y.L. Wong, E.M.W. Chung, P.S. Huang, L.B. Lee, Z.Y. |
| description | We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 /spl mu/m-thick thin films were completely crystallized into the perovskite phase at 500/spl deg/C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively. The 1.0 /spl mu/m-thick train film annealed at 650/spl deg/C for 60 min has a remnant polarization Pr of 13.2 /spl mu/C/cm/sup 2/ and a coercive field Ec of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz The 0.47 /spl mu/m-thick thin film annealed at 600/spl deg/C for 60 min has a remnant polarization Pr of 16.3 /spl mu/C/cm/sup 2/ and a coercive fields Ec of 117.6 kV/cm. |
| doi_str_mv | 10.1109/ISAF.1996.602786 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_602786</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>602786</ieee_id><sourcerecordid>602786</sourcerecordid><originalsourceid>FETCH-ieee_primary_6027863</originalsourceid><addsrcrecordid>eNp9jrEKwjAURQMiKNpdnN4PWNPWtM0oYtWtaCeXEvW1Rto0JHHo31vQ2cuBC-cul5BFQP0goHx9umwzP-A89mMaJmk8Ih5PUjoQRRFjdEI8a190yIaxMKFTcsivBbinVFDJpgVtUAsjnOwUDORuXUjABu_OdA-EWw_nDFpRKxyEAqvfzqGRqp6TcSUai96vZ2SZ7YvdcSURsdRGtsL05fdV9Hf8ABgoOvc</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Lu, D.X. ; Pun, E.Y.B. ; Zhang, Y.L. ; Wong, E.M.W. ; Chung, P.S. ; Huang, L.B. ; Lee, Z.Y.</creator><creatorcontrib>Lu, D.X. ; Pun, E.Y.B. ; Zhang, Y.L. ; Wong, E.M.W. ; Chung, P.S. ; Huang, L.B. ; Lee, Z.Y.</creatorcontrib><description>We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 /spl mu/m-thick thin films were completely crystallized into the perovskite phase at 500/spl deg/C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively. The 1.0 /spl mu/m-thick train film annealed at 650/spl deg/C for 60 min has a remnant polarization Pr of 13.2 /spl mu/C/cm/sup 2/ and a coercive field Ec of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz The 0.47 /spl mu/m-thick thin film annealed at 600/spl deg/C for 60 min has a remnant polarization Pr of 16.3 /spl mu/C/cm/sup 2/ and a coercive fields Ec of 117.6 kV/cm.</description><identifier>ISBN: 9780780333550</identifier><identifier>ISBN: 0780333551</identifier><identifier>DOI: 10.1109/ISAF.1996.602786</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Dielectric constant ; Dielectric losses ; Dielectric substrates ; Dielectric thin films ; Electrodes ; Polarization ; Radio frequency ; Sputtering ; Transistors</subject><ispartof>ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics, 1996, Vol.1, p.451-454 vol.1</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/602786$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/602786$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Lu, D.X.</creatorcontrib><creatorcontrib>Pun, E.Y.B.</creatorcontrib><creatorcontrib>Zhang, Y.L.</creatorcontrib><creatorcontrib>Wong, E.M.W.</creatorcontrib><creatorcontrib>Chung, P.S.</creatorcontrib><creatorcontrib>Huang, L.B.</creatorcontrib><creatorcontrib>Lee, Z.Y.</creatorcontrib><title>PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering</title><title>ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics</title><addtitle>ISAF</addtitle><description>We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 /spl mu/m-thick thin films were completely crystallized into the perovskite phase at 500/spl deg/C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively. The 1.0 /spl mu/m-thick train film annealed at 650/spl deg/C for 60 min has a remnant polarization Pr of 13.2 /spl mu/C/cm/sup 2/ and a coercive field Ec of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz The 0.47 /spl mu/m-thick thin film annealed at 600/spl deg/C for 60 min has a remnant polarization Pr of 16.3 /spl mu/C/cm/sup 2/ and a coercive fields Ec of 117.6 kV/cm.</description><subject>Annealing</subject><subject>Dielectric constant</subject><subject>Dielectric losses</subject><subject>Dielectric substrates</subject><subject>Dielectric thin films</subject><subject>Electrodes</subject><subject>Polarization</subject><subject>Radio frequency</subject><subject>Sputtering</subject><subject>Transistors</subject><isbn>9780780333550</isbn><isbn>0780333551</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jrEKwjAURQMiKNpdnN4PWNPWtM0oYtWtaCeXEvW1Rto0JHHo31vQ2cuBC-cul5BFQP0goHx9umwzP-A89mMaJmk8Ih5PUjoQRRFjdEI8a190yIaxMKFTcsivBbinVFDJpgVtUAsjnOwUDORuXUjABu_OdA-EWw_nDFpRKxyEAqvfzqGRqp6TcSUai96vZ2SZ7YvdcSURsdRGtsL05fdV9Hf8ABgoOvc</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Lu, D.X.</creator><creator>Pun, E.Y.B.</creator><creator>Zhang, Y.L.</creator><creator>Wong, E.M.W.</creator><creator>Chung, P.S.</creator><creator>Huang, L.B.</creator><creator>Lee, Z.Y.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering</title><author>Lu, D.X. ; Pun, E.Y.B. ; Zhang, Y.L. ; Wong, E.M.W. ; Chung, P.S. ; Huang, L.B. ; Lee, Z.Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_6027863</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Annealing</topic><topic>Dielectric constant</topic><topic>Dielectric losses</topic><topic>Dielectric substrates</topic><topic>Dielectric thin films</topic><topic>Electrodes</topic><topic>Polarization</topic><topic>Radio frequency</topic><topic>Sputtering</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Lu, D.X.</creatorcontrib><creatorcontrib>Pun, E.Y.B.</creatorcontrib><creatorcontrib>Zhang, Y.L.</creatorcontrib><creatorcontrib>Wong, E.M.W.</creatorcontrib><creatorcontrib>Chung, P.S.</creatorcontrib><creatorcontrib>Huang, L.B.</creatorcontrib><creatorcontrib>Lee, Z.Y.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lu, D.X.</au><au>Pun, E.Y.B.</au><au>Zhang, Y.L.</au><au>Wong, E.M.W.</au><au>Chung, P.S.</au><au>Huang, L.B.</au><au>Lee, Z.Y.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering</atitle><btitle>ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics</btitle><stitle>ISAF</stitle><date>1996</date><risdate>1996</risdate><volume>1</volume><spage>451</spage><epage>454 vol.1</epage><pages>451-454 vol.1</pages><isbn>9780780333550</isbn><isbn>0780333551</isbn><abstract>We have investigated the structural and electrical properties of lead-zirconate-titanate (PZT) thin films prepared on Pt/Ti/Si substrates by rf magnetron sputtering. The as-deposited 1.0 /spl mu/m-thick thin films were completely crystallized into the perovskite phase at 500/spl deg/C for 60 min in oxygen. The structure and the lattice parameter, the dielectric loss and the dielectric constant have been examined as a function of annealing temperature and frequency, respectively. The 1.0 /spl mu/m-thick train film annealed at 650/spl deg/C for 60 min has a remnant polarization Pr of 13.2 /spl mu/C/cm/sup 2/ and a coercive field Ec of 55.5 kV/cm, the dielectric constant decreases from 950 to 500 as frequency increases from 10 Hz to 1000 kHz. The dielectric constant has the lowest value when the frequency is 20 kHz The 0.47 /spl mu/m-thick thin film annealed at 600/spl deg/C for 60 min has a remnant polarization Pr of 16.3 /spl mu/C/cm/sup 2/ and a coercive fields Ec of 117.6 kV/cm.</abstract><pub>IEEE</pub><doi>10.1109/ISAF.1996.602786</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 9780780333550 |
| ispartof | ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics, 1996, Vol.1, p.451-454 vol.1 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_602786 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Dielectric constant Dielectric losses Dielectric substrates Dielectric thin films Electrodes Polarization Radio frequency Sputtering Transistors |
| title | PZT thin film preparation on Pt/Ti electrode by RF magnetron sputtering |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T16%3A15%3A45IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=PZT%20thin%20film%20preparation%20on%20Pt/Ti%20electrode%20by%20RF%20magnetron%20sputtering&rft.btitle=ISAF%20'96.%20Proceedings%20of%20the%20Tenth%20IEEE%20International%20Symposium%20on%20Applications%20of%20Ferroelectrics&rft.au=Lu,%20D.X.&rft.date=1996&rft.volume=1&rft.spage=451&rft.epage=454%20vol.1&rft.pages=451-454%20vol.1&rft.isbn=9780780333550&rft.isbn_list=0780333551&rft_id=info:doi/10.1109/ISAF.1996.602786&rft_dat=%3Cieee_6IE%3E602786%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=602786&rfr_iscdi=true |