Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

The direct impact of the SiO 2 /4H-SiC interface state density ( D it ) on the channel mobility of lateral field-effect transistors is studied by tailoring the trap distribution via nitridation of the thermal gate oxide. We observe that mobility scales like the inverse of the charged state density,...

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Veröffentlicht in:	IEEE transactions on electron devices 2011-11, Vol.58 (11), p.3808-3811
Hauptverfasser:	Rozen, J., Ahyi, A. C., Xingguang Zhu, Williams, J. R., Feldman, L. C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Applied sciences Channels Charge carrier mobility Compound structure devices Density Devices Educational institutions Electronics Exact sciences and technology Gates interface state density Interface states Interfaces Inverse Logic gates MOS devices MOSFETs nitrogen incorporation Oxides Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices semiconductor-insulator interfaces Silicon carbide Transistors
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