Electron emission from GaN/LaB/sub 6/ cold cathodes

Summary form only given, as follows. Recent developments in vacuum microelectronics have led to a resurgence of interest into cold cathode emission for applications to a variety of electronic devices. For these new applications, the ideal cold cathode should have the following characteristics: (i) l...

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Hauptverfasser: Horning, R.D., Akinwande, A.I., Ruden, P.P., Goldenberg, B.L., King, J.
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Akinwande, A.I.
Ruden, P.P.
Goldenberg, B.L.
King, J.
description Summary form only given, as follows. Recent developments in vacuum microelectronics have led to a resurgence of interest into cold cathode emission for applications to a variety of electronic devices. For these new applications, the ideal cold cathode should have the following characteristics: (i) low-voltage operation (5-20 volts); (ii) high current density (5-10 A/cm2); (iii) room temperature operation; and (iv) stable and durable operation. Effective Negative-Electron-Affinity (NEA) and Optoelectronic Cold Cathode (OECC) structures have been fabricated using a combination of the wide-bandgap semiconductors, GaN and AlGaN, and the low work function metal, LaB/sub 6/. In the NEA structure, electrons are injected from an n-type GaN layer into a thin p-type GaN layer. Appropriate design of the p-type thickness, which was guided by Monte Carlo transport simulations, allows some fraction of the injected electrons to arrive at the p-GaN/LaB/sub 6/ interface with enough energy to traverse the thin LaB/sub 6/ layer and emit into vacuum. In the OECC, photons are generated at a p-n junction in GaN. The photons are subsequently absorbed by a LaB/sub 6/ layer, creating electrons with sufficient energy (3.4 eV) to overcome the LaB/sub 6/ work function of /spl sim/2.5 eV. The GaN and LaB/sub 6/ fabrication is discussed in detail. Results of the photoemission from thin LaB/sub 6/ films and electron emission from hybrid and monolithic cold cathodes are discussed.
doi_str_mv 10.1109/IVMC.1996.601919
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Recent developments in vacuum microelectronics have led to a resurgence of interest into cold cathode emission for applications to a variety of electronic devices. For these new applications, the ideal cold cathode should have the following characteristics: (i) low-voltage operation (5-20 volts); (ii) high current density (5-10 A/cm2); (iii) room temperature operation; and (iv) stable and durable operation. Effective Negative-Electron-Affinity (NEA) and Optoelectronic Cold Cathode (OECC) structures have been fabricated using a combination of the wide-bandgap semiconductors, GaN and AlGaN, and the low work function metal, LaB/sub 6/. In the NEA structure, electrons are injected from an n-type GaN layer into a thin p-type GaN layer. Appropriate design of the p-type thickness, which was guided by Monte Carlo transport simulations, allows some fraction of the injected electrons to arrive at the p-GaN/LaB/sub 6/ interface with enough energy to traverse the thin LaB/sub 6/ layer and emit into vacuum. In the OECC, photons are generated at a p-n junction in GaN. The photons are subsequently absorbed by a LaB/sub 6/ layer, creating electrons with sufficient energy (3.4 eV) to overcome the LaB/sub 6/ work function of /spl sim/2.5 eV. The GaN and LaB/sub 6/ fabrication is discussed in detail. Results of the photoemission from thin LaB/sub 6/ films and electron emission from hybrid and monolithic cold cathodes are discussed.</description><identifier>ISBN: 0780335945</identifier><identifier>ISBN: 9780780335943</identifier><identifier>DOI: 10.1109/IVMC.1996.601919</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum gallium nitride ; Cathodes ; Current density ; Electron emission ; Elementary particle vacuum ; Gallium nitride ; Microelectronics ; Monte Carlo methods ; P-n junctions ; Temperature</subject><ispartof>9th International Vacuum Microelectronics Conference, 1996, p.660</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/601919$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/601919$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Horning, R.D.</creatorcontrib><creatorcontrib>Akinwande, A.I.</creatorcontrib><creatorcontrib>Ruden, P.P.</creatorcontrib><creatorcontrib>Goldenberg, B.L.</creatorcontrib><creatorcontrib>King, J.</creatorcontrib><title>Electron emission from GaN/LaB/sub 6/ cold cathodes</title><title>9th International Vacuum Microelectronics Conference</title><addtitle>IVMC</addtitle><description>Summary form only given, as follows. Recent developments in vacuum microelectronics have led to a resurgence of interest into cold cathode emission for applications to a variety of electronic devices. For these new applications, the ideal cold cathode should have the following characteristics: (i) low-voltage operation (5-20 volts); (ii) high current density (5-10 A/cm2); (iii) room temperature operation; and (iv) stable and durable operation. Effective Negative-Electron-Affinity (NEA) and Optoelectronic Cold Cathode (OECC) structures have been fabricated using a combination of the wide-bandgap semiconductors, GaN and AlGaN, and the low work function metal, LaB/sub 6/. In the NEA structure, electrons are injected from an n-type GaN layer into a thin p-type GaN layer. Appropriate design of the p-type thickness, which was guided by Monte Carlo transport simulations, allows some fraction of the injected electrons to arrive at the p-GaN/LaB/sub 6/ interface with enough energy to traverse the thin LaB/sub 6/ layer and emit into vacuum. In the OECC, photons are generated at a p-n junction in GaN. The photons are subsequently absorbed by a LaB/sub 6/ layer, creating electrons with sufficient energy (3.4 eV) to overcome the LaB/sub 6/ work function of /spl sim/2.5 eV. The GaN and LaB/sub 6/ fabrication is discussed in detail. 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Recent developments in vacuum microelectronics have led to a resurgence of interest into cold cathode emission for applications to a variety of electronic devices. For these new applications, the ideal cold cathode should have the following characteristics: (i) low-voltage operation (5-20 volts); (ii) high current density (5-10 A/cm2); (iii) room temperature operation; and (iv) stable and durable operation. Effective Negative-Electron-Affinity (NEA) and Optoelectronic Cold Cathode (OECC) structures have been fabricated using a combination of the wide-bandgap semiconductors, GaN and AlGaN, and the low work function metal, LaB/sub 6/. In the NEA structure, electrons are injected from an n-type GaN layer into a thin p-type GaN layer. Appropriate design of the p-type thickness, which was guided by Monte Carlo transport simulations, allows some fraction of the injected electrons to arrive at the p-GaN/LaB/sub 6/ interface with enough energy to traverse the thin LaB/sub 6/ layer and emit into vacuum. In the OECC, photons are generated at a p-n junction in GaN. The photons are subsequently absorbed by a LaB/sub 6/ layer, creating electrons with sufficient energy (3.4 eV) to overcome the LaB/sub 6/ work function of /spl sim/2.5 eV. The GaN and LaB/sub 6/ fabrication is discussed in detail. Results of the photoemission from thin LaB/sub 6/ films and electron emission from hybrid and monolithic cold cathodes are discussed.</abstract><pub>IEEE</pub><doi>10.1109/IVMC.1996.601919</doi></addata></record>
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subjects Aluminum gallium nitride
Cathodes
Current density
Electron emission
Elementary particle vacuum
Gallium nitride
Microelectronics
Monte Carlo methods
P-n junctions
Temperature
title Electron emission from GaN/LaB/sub 6/ cold cathodes
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