Transport in kinked bi-layer graphene interconnects
We present transport experiments on kinked bi-layer graphene nanoribbon interconnects. The studied devices consist of approximately 80 nm wide and 1 μm long bi-layer graphene nanoribbons with different lateral kink angles. We discuss the ambipolar transport characteristics and we show a systematic d...
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| creator | Terres, B. Borgwardt, N. Dauber, J. Volk, C. Engels, S. Fringes, S. Weber, P. Wichmann, U. Stampfer, C. Trellenkamp, S. |
| description | We present transport experiments on kinked bi-layer graphene nanoribbon interconnects. The studied devices consist of approximately 80 nm wide and 1 μm long bi-layer graphene nanoribbons with different lateral kink angles. We discuss the ambipolar transport characteristics and we show a systematic dependence of the overall conductance with the kink angle, i.e. with the shape of the etched bi-layer graphene nanoribbon. The measurements can be well described with the self-consistent Boltzmann equation for diffusive transport where the kinked angle appears to have an influence on the effective charge carrier mobility, thus revealing the presence of geometry-dependent ballistic transport effects. These results are crucial for the design and fabrication of future single-layer or bi-layer graphene interconnects in potential all-carbon monolithic systems. |
| doi_str_mv | 10.1109/NEMS.2011.6017523 |
| format | Conference Proceeding |
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The studied devices consist of approximately 80 nm wide and 1 μm long bi-layer graphene nanoribbons with different lateral kink angles. We discuss the ambipolar transport characteristics and we show a systematic dependence of the overall conductance with the kink angle, i.e. with the shape of the etched bi-layer graphene nanoribbon. The measurements can be well described with the self-consistent Boltzmann equation for diffusive transport where the kinked angle appears to have an influence on the effective charge carrier mobility, thus revealing the presence of geometry-dependent ballistic transport effects. These results are crucial for the design and fabrication of future single-layer or bi-layer graphene interconnects in potential all-carbon monolithic systems.</abstract><pub>IEEE</pub><doi>10.1109/NEMS.2011.6017523</doi><tpages>4</tpages></addata></record> |
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| subjects | bi-layer graphene Charge carrier mobility Charge carrier processes Conductivity Current measurement Fabrication Integrated circuit interconnections interconnects Substrates transport |
| title | Transport in kinked bi-layer graphene interconnects |
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