Characteristics of Metal-Pb(Zr0.53Ti0.47)O3-TiO2-Si capacitor for nonvolatile memory applications
The structural and electrical characteristics of Metal-Pb(Zr 0.53 Ti 0.47 )O 3 (PZT)-TiO 2 -Si structures with TiO 2 insulating layer deposited by metal organic chemical vapor deposition (MOCVD) method were investigated. The dependence of the electrical performances such as memory window (MW) and le...
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| creator | Changjian Zhou Pinggang Peng Yi Yang Tianling Ren |
| description | The structural and electrical characteristics of Metal-Pb(Zr 0.53 Ti 0.47 )O 3 (PZT)-TiO 2 -Si structures with TiO 2 insulating layer deposited by metal organic chemical vapor deposition (MOCVD) method were investigated. The dependence of the electrical performances such as memory window (MW) and leakage current density on the thickness of the insulator layer and electrode material was studied. Highly preferred ; orientation PZT thin film was obtained on the well crystallized TiO 2 insulator layer. For the Pt/PZT/TiO 2 (190nm)/Si structure working in the charge injection mode, a memory window of 0.5V and 2.2V, and a leakage current density of 3.38×10 -7 A/cm 2 , 6.21×10 -7 A/cm 2 were obtained under a sweeping voltage of 5V and 7V, respectively. The memory characteristics suggest the possibility for next generation nonvolatile memory applications. |
| doi_str_mv | 10.1109/NEMS.2011.6017313 |
| format | Conference Proceeding |
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The dependence of the electrical performances such as memory window (MW) and leakage current density on the thickness of the insulator layer and electrode material was studied. Highly preferred <;110>; orientation PZT thin film was obtained on the well crystallized TiO 2 insulator layer. For the Pt/PZT/TiO 2 (190nm)/Si structure working in the charge injection mode, a memory window of 0.5V and 2.2V, and a leakage current density of 3.38×10 -7 A/cm 2 , 6.21×10 -7 A/cm 2 were obtained under a sweeping voltage of 5V and 7V, respectively. 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The dependence of the electrical performances such as memory window (MW) and leakage current density on the thickness of the insulator layer and electrode material was studied. Highly preferred <;110>; orientation PZT thin film was obtained on the well crystallized TiO 2 insulator layer. For the Pt/PZT/TiO 2 (190nm)/Si structure working in the charge injection mode, a memory window of 0.5V and 2.2V, and a leakage current density of 3.38×10 -7 A/cm 2 , 6.21×10 -7 A/cm 2 were obtained under a sweeping voltage of 5V and 7V, respectively. The memory characteristics suggest the possibility for next generation nonvolatile memory applications.</description><subject>Capacitance-voltage characteristics</subject><subject>Capacitors</subject><subject>charge injection</subject><subject>Electrodes</subject><subject>FeRAM</subject><subject>Insulators</subject><subject>Leakage current</subject><subject>MFIS</subject><subject>Nonvolatile memory</subject><subject>PZT</subject><subject>Silicon</subject><subject>TiO 2</subject><isbn>1612847757</isbn><isbn>9781612847757</isbn><isbn>1612847765</isbn><isbn>9781612847771</isbn><isbn>9781612847764</isbn><isbn>1612847773</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jjFrwzAUhFVCoUmbH1C6aGwGq3qWLdVzSMiSpBBPXcKrkOkrsmUkEci_r4dAtx4cx3e3HGPPIAWAbN4Om_1JlBJAaAlGgbpjC9BQvlfG6Hr2B7V5YMuUfuQkrRvVVHOG62-MaLOLlDLZxEPH9y6jLz6-Xj-jFLVqSYrKrI6qaOlYFifiFke0lEPk3eQhDJfgMZN3vHd9iFeO4-jJTlUY0hO779Ant7zlI3vZbtr1riDn3HmM1GO8nm_X1f_rL45LRSc</recordid><startdate>201102</startdate><enddate>201102</enddate><creator>Changjian Zhou</creator><creator>Pinggang Peng</creator><creator>Yi Yang</creator><creator>Tianling Ren</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201102</creationdate><title>Characteristics of Metal-Pb(Zr0.53Ti0.47)O3-TiO2-Si capacitor for nonvolatile memory applications</title><author>Changjian Zhou ; Pinggang Peng ; Yi Yang ; Tianling Ren</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_60173133</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Capacitance-voltage characteristics</topic><topic>Capacitors</topic><topic>charge injection</topic><topic>Electrodes</topic><topic>FeRAM</topic><topic>Insulators</topic><topic>Leakage current</topic><topic>MFIS</topic><topic>Nonvolatile memory</topic><topic>PZT</topic><topic>Silicon</topic><topic>TiO 2</topic><toplevel>online_resources</toplevel><creatorcontrib>Changjian Zhou</creatorcontrib><creatorcontrib>Pinggang Peng</creatorcontrib><creatorcontrib>Yi Yang</creatorcontrib><creatorcontrib>Tianling Ren</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Changjian Zhou</au><au>Pinggang Peng</au><au>Yi Yang</au><au>Tianling Ren</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Characteristics of Metal-Pb(Zr0.53Ti0.47)O3-TiO2-Si capacitor for nonvolatile memory applications</atitle><btitle>2011 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems</btitle><stitle>NEMS</stitle><date>2011-02</date><risdate>2011</risdate><spage>134</spage><epage>137</epage><pages>134-137</pages><isbn>1612847757</isbn><isbn>9781612847757</isbn><eisbn>1612847765</eisbn><eisbn>9781612847771</eisbn><eisbn>9781612847764</eisbn><eisbn>1612847773</eisbn><abstract>The structural and electrical characteristics of Metal-Pb(Zr 0.53 Ti 0.47 )O 3 (PZT)-TiO 2 -Si structures with TiO 2 insulating layer deposited by metal organic chemical vapor deposition (MOCVD) method were investigated. The dependence of the electrical performances such as memory window (MW) and leakage current density on the thickness of the insulator layer and electrode material was studied. Highly preferred <;110>; orientation PZT thin film was obtained on the well crystallized TiO 2 insulator layer. For the Pt/PZT/TiO 2 (190nm)/Si structure working in the charge injection mode, a memory window of 0.5V and 2.2V, and a leakage current density of 3.38×10 -7 A/cm 2 , 6.21×10 -7 A/cm 2 were obtained under a sweeping voltage of 5V and 7V, respectively. The memory characteristics suggest the possibility for next generation nonvolatile memory applications.</abstract><pub>IEEE</pub><doi>10.1109/NEMS.2011.6017313</doi></addata></record> |
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| subjects | Capacitance-voltage characteristics Capacitors charge injection Electrodes FeRAM Insulators Leakage current MFIS Nonvolatile memory PZT Silicon TiO 2 |
| title | Characteristics of Metal-Pb(Zr0.53Ti0.47)O3-TiO2-Si capacitor for nonvolatile memory applications |
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