In-situ large scale deposition of PZT films by RF magnetron sputtering

In the present study, high quality PZT films were deposited by RF magnetron sputtering onto 200mm thermally oxidized silicon substrates at substrate holder temperatures (T h ) between 550°C - 700°C using PbO-enriched single ceramic PZT targets. The high substrate temperatures used here allowed direc...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Kratzer, M., Castaldi, L., Heinz, B., Mamazza, R., Kaden, D., Quenzer, H., Wagner, B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Ferroelectric in-situ deposition Lead Piezoelectric PZT Radio frequency RF magnetron sputtering Sputtering Substrates Temperature measurement X-ray scattering
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