Piezoresistive Strain Sensors and Multiplexed Arrays Using Assemblies of Single-Crystalline Silicon Nanoribbons on Plastic Substrates
This paper describes the fabrication and properties of flexible strain sensors that use thin ribbons of single-crystalline silicon on plastic substrates. The devices exhibit gauge factors of 43, measured by applying uniaxial tensile strain, with good repeatability and agreement with expectation base...
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Veröffentlicht in: | IEEE transactions on electron devices 2011-11, Vol.58 (11), p.4074-4078 |
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container_title | IEEE transactions on electron devices |
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creator | Sang Min Won Hoon-Sik Kim Nanshu Lu Dae-Gon Kim Del Solar, Cesar Duenas, Terrisa Ameen, Abid Rogers, John A. |
description | This paper describes the fabrication and properties of flexible strain sensors that use thin ribbons of single-crystalline silicon on plastic substrates. The devices exhibit gauge factors of 43, measured by applying uniaxial tensile strain, with good repeatability and agreement with expectation based on finite-element modeling and literature values for the piezoresistivity of silicon. Using Wheatstone bridge configurations integrated with multiplexing diodes, these devices can be integrated into large-area arrays for strain mapping. High sensitivity and good stability suggest promise for the various sensing applications. |
doi_str_mv | 10.1109/TED.2011.2164923 |
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The devices exhibit gauge factors of 43, measured by applying uniaxial tensile strain, with good repeatability and agreement with expectation based on finite-element modeling and literature values for the piezoresistivity of silicon. Using Wheatstone bridge configurations integrated with multiplexing diodes, these devices can be integrated into large-area arrays for strain mapping. High sensitivity and good stability suggest promise for the various sensing applications.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2011.2164923</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Acoustic wave devices, piezoelectric and piezoresistive devices ; Applied sciences ; Arrays ; Cross-disciplinary physics: materials science; rheology ; Devices ; Diodes ; Electronics ; Exact sciences and technology ; Flexible circuits ; General equipment and techniques ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Materials science ; Mathematical models ; Multiplexing ; Nanoscale materials and structures: fabrication and characterization ; Nanostructure ; Other topics in nanoscale materials and structures ; Physics ; Piezoresistance ; Resistors ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Sensors ; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing ; Silicon ; Silicon substrates ; single-crystalline silicon sensor ; Strain ; strain gauge ; Substrates</subject><ispartof>IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.4074-4078</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Nov 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c419t-8871850b3a9e9c2ca6709f22b819b62c0b469bb68b35f1663c81d6b413dbcc283</citedby><cites>FETCH-LOGICAL-c419t-8871850b3a9e9c2ca6709f22b819b62c0b469bb68b35f1663c81d6b413dbcc283</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6012520$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6012520$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24776198$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Sang Min Won</creatorcontrib><creatorcontrib>Hoon-Sik Kim</creatorcontrib><creatorcontrib>Nanshu Lu</creatorcontrib><creatorcontrib>Dae-Gon Kim</creatorcontrib><creatorcontrib>Del Solar, Cesar</creatorcontrib><creatorcontrib>Duenas, Terrisa</creatorcontrib><creatorcontrib>Ameen, Abid</creatorcontrib><creatorcontrib>Rogers, John A.</creatorcontrib><title>Piezoresistive Strain Sensors and Multiplexed Arrays Using Assemblies of Single-Crystalline Silicon Nanoribbons on Plastic Substrates</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>This paper describes the fabrication and properties of flexible strain sensors that use thin ribbons of single-crystalline silicon on plastic substrates. The devices exhibit gauge factors of 43, measured by applying uniaxial tensile strain, with good repeatability and agreement with expectation based on finite-element modeling and literature values for the piezoresistivity of silicon. Using Wheatstone bridge configurations integrated with multiplexing diodes, these devices can be integrated into large-area arrays for strain mapping. High sensitivity and good stability suggest promise for the various sensing applications.</description><subject>Acoustic wave devices, piezoelectric and piezoresistive devices</subject><subject>Applied sciences</subject><subject>Arrays</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Devices</subject><subject>Diodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Flexible circuits</subject><subject>General equipment and techniques</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Materials science</subject><subject>Mathematical models</subject><subject>Multiplexing</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanostructure</subject><subject>Other topics in nanoscale materials and structures</subject><subject>Physics</subject><subject>Piezoresistance</subject><subject>Resistors</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Sensors</subject><subject>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>single-crystalline silicon sensor</subject><subject>Strain</subject><subject>strain gauge</subject><subject>Substrates</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkc1rGzEQxUVpoW7Se6EXUSj0so4-drXS0TjpByRtwMl5keTZoiBLrma31Ln3_66CTQ49DTPzm_cGHiHvOFtyzszF3dXlUjDOl4Kr1gj5gix41_WNUa16SRaMcd0YqeVr8gbxobaqbcWC_L0N8JgLYMAp_Aa6mYoNiW4gYS5IbdrSmzlOYR_hD2zpqhR7QHqPIf2kK0TYuRgAaR7ppo4iNOtywMnGGFIVCzH4nOh3m3IJzuVUyURvo61mnm5mh9VuAjwnr0YbEd6e6hm5_3x1t_7aXP_48m29um58y83UaN1z3TEnrQHjhbeqZ2YUwmlunBKeuVYZ55R2shu5UtJrvlWu5XLrvBdanpFPR919yb9mwGnYBfQQo02QZxy4bE110p2q6If_0Ic8l1S_GwxjrNOd5hViR8iXjFhgHPYl7Gw5DJwNT7EMNZbhKZbhFEs9-XjStehtHItNPuDznWj7XtUPKvf-yAUAeF4rxkUnmPwHDZuXVA</recordid><startdate>20111101</startdate><enddate>20111101</enddate><creator>Sang Min Won</creator><creator>Hoon-Sik Kim</creator><creator>Nanshu Lu</creator><creator>Dae-Gon Kim</creator><creator>Del Solar, Cesar</creator><creator>Duenas, Terrisa</creator><creator>Ameen, Abid</creator><creator>Rogers, John A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. 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The devices exhibit gauge factors of 43, measured by applying uniaxial tensile strain, with good repeatability and agreement with expectation based on finite-element modeling and literature values for the piezoresistivity of silicon. Using Wheatstone bridge configurations integrated with multiplexing diodes, these devices can be integrated into large-area arrays for strain mapping. High sensitivity and good stability suggest promise for the various sensing applications.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2011.2164923</doi><tpages>5</tpages></addata></record> |
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subjects | Acoustic wave devices, piezoelectric and piezoresistive devices Applied sciences Arrays Cross-disciplinary physics: materials science rheology Devices Diodes Electronics Exact sciences and technology Flexible circuits General equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Materials science Mathematical models Multiplexing Nanoscale materials and structures: fabrication and characterization Nanostructure Other topics in nanoscale materials and structures Physics Piezoresistance Resistors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Silicon Silicon substrates single-crystalline silicon sensor Strain strain gauge Substrates |
title | Piezoresistive Strain Sensors and Multiplexed Arrays Using Assemblies of Single-Crystalline Silicon Nanoribbons on Plastic Substrates |
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