Drain resistance degradation under high fields in AlInAs/GaInAs MODFETs

Lattice-matched AlInAs/GaInAs modulation-doped FETs (MODFETs) demonstrate excellent high-frequency, small-signal performance. However, high-power, large-signal applications of these devices may be limited. Impact ionization and tunneling reduce the breakdown voltage, which limits the upper end of th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wakita, A.S., Rohdin, H., Su, C.-Y., Moll, N., Nagy, A., Robbins, V.M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Breakdown voltage Degradation Epitaxial layers FETs HEMTs Impact ionization Knee MODFETs Power generation Tunneling
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