A novel 3-D integrated RTD-HFET frequency multiplier

A frequency multiplier circuit using a resonant tunneling diode (RTD) as a load of a HFET is developed. Based on 3D-monolithic integration on a semi-insulating InP-substrate, a demonstrator is realised generating odd higher harmonics with high efficiency. The multiplier is highly compact and combine...

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Hauptverfasser: Auer, U., Janssen, G., Agethen, M., Reuter, R., Prost, W., Tegude, F.J.
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creator Auer, U.
Janssen, G.
Agethen, M.
Reuter, R.
Prost, W.
Tegude, F.J.
description A frequency multiplier circuit using a resonant tunneling diode (RTD) as a load of a HFET is developed. Based on 3D-monolithic integration on a semi-insulating InP-substrate, a demonstrator is realised generating odd higher harmonics with high efficiency. The multiplier is highly compact and combines amplification of the fundamental frequency in the HFET with the high switching performance of the RTD. The Microwave Design System is used to evaluate its ultra high frequency potential predicting 0.115 times the voltage amplitude of the fundamental input signal for the third harmonic at 100 GHz. Optimization of the circuit design and the RTD-layer structure on top of the HFET with respect to the peak and valley parameters will increase the efficiency.
doi_str_mv 10.1109/ICIPRM.1997.600163
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_600163</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>600163</ieee_id><sourcerecordid>600163</sourcerecordid><originalsourceid>FETCH-LOGICAL-i172t-d511488cf70fe5d244c4d262867ca38600b57b5a97edbd87fc4953ffe66232493</originalsourceid><addsrcrecordid>eNotj8tqwkAYhQfaQq36Aq7mBSad-2Upsa0BS0XsWpKZf8qUmNpJLPj2DSgcOJuPj3MQWjBaMEbdc1VW2917wZwzhaaUaXGH5s5YOkYI6yy_R5MR5MRq7R7RU99_U0qV4XaC5BJ3P3_QYkFWOHUDfOV6gIB3-xVZv77scczwe4bOX_Dx3A7p1CbIM_QQ67aH-a2n6HNEyzXZfLxV5XJDEjN8IEExJq310dAIKnApvQxcc6uNr4UdtzbKNKp2BkITrIleOiViBK254NKJKVpcvQkADqecjnW-HK4fxT8eBkOs</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A novel 3-D integrated RTD-HFET frequency multiplier</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Auer, U. ; Janssen, G. ; Agethen, M. ; Reuter, R. ; Prost, W. ; Tegude, F.J.</creator><creatorcontrib>Auer, U. ; Janssen, G. ; Agethen, M. ; Reuter, R. ; Prost, W. ; Tegude, F.J.</creatorcontrib><description>A frequency multiplier circuit using a resonant tunneling diode (RTD) as a load of a HFET is developed. Based on 3D-monolithic integration on a semi-insulating InP-substrate, a demonstrator is realised generating odd higher harmonics with high efficiency. The multiplier is highly compact and combines amplification of the fundamental frequency in the HFET with the high switching performance of the RTD. The Microwave Design System is used to evaluate its ultra high frequency potential predicting 0.115 times the voltage amplitude of the fundamental input signal for the third harmonic at 100 GHz. Optimization of the circuit design and the RTD-layer structure on top of the HFET with respect to the peak and valley parameters will increase the efficiency.</description><identifier>ISSN: 1092-8669</identifier><identifier>ISBN: 9780780338982</identifier><identifier>ISBN: 0780338987</identifier><identifier>DOI: 10.1109/ICIPRM.1997.600163</identifier><language>eng</language><publisher>IEEE</publisher><subject>Circuit synthesis ; Design optimization ; Diodes ; Frequency ; HEMTs ; MODFETs ; Resonant tunneling devices ; RLC circuits ; Signal design ; Voltage</subject><ispartof>Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials, 1997, p.373-375</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/600163$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>310,311,781,785,790,791,2059,4051,4052,27930,54925</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/600163$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Auer, U.</creatorcontrib><creatorcontrib>Janssen, G.</creatorcontrib><creatorcontrib>Agethen, M.</creatorcontrib><creatorcontrib>Reuter, R.</creatorcontrib><creatorcontrib>Prost, W.</creatorcontrib><creatorcontrib>Tegude, F.J.</creatorcontrib><title>A novel 3-D integrated RTD-HFET frequency multiplier</title><title>Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials</title><addtitle>ICIPRM</addtitle><description>A frequency multiplier circuit using a resonant tunneling diode (RTD) as a load of a HFET is developed. Based on 3D-monolithic integration on a semi-insulating InP-substrate, a demonstrator is realised generating odd higher harmonics with high efficiency. The multiplier is highly compact and combines amplification of the fundamental frequency in the HFET with the high switching performance of the RTD. The Microwave Design System is used to evaluate its ultra high frequency potential predicting 0.115 times the voltage amplitude of the fundamental input signal for the third harmonic at 100 GHz. Optimization of the circuit design and the RTD-layer structure on top of the HFET with respect to the peak and valley parameters will increase the efficiency.</description><subject>Circuit synthesis</subject><subject>Design optimization</subject><subject>Diodes</subject><subject>Frequency</subject><subject>HEMTs</subject><subject>MODFETs</subject><subject>Resonant tunneling devices</subject><subject>RLC circuits</subject><subject>Signal design</subject><subject>Voltage</subject><issn>1092-8669</issn><isbn>9780780338982</isbn><isbn>0780338987</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tqwkAYhQfaQq36Aq7mBSad-2Upsa0BS0XsWpKZf8qUmNpJLPj2DSgcOJuPj3MQWjBaMEbdc1VW2917wZwzhaaUaXGH5s5YOkYI6yy_R5MR5MRq7R7RU99_U0qV4XaC5BJ3P3_QYkFWOHUDfOV6gIB3-xVZv77scczwe4bOX_Dx3A7p1CbIM_QQ67aH-a2n6HNEyzXZfLxV5XJDEjN8IEExJq310dAIKnApvQxcc6uNr4UdtzbKNKp2BkITrIleOiViBK254NKJKVpcvQkADqecjnW-HK4fxT8eBkOs</recordid><startdate>1997</startdate><enddate>1997</enddate><creator>Auer, U.</creator><creator>Janssen, G.</creator><creator>Agethen, M.</creator><creator>Reuter, R.</creator><creator>Prost, W.</creator><creator>Tegude, F.J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1997</creationdate><title>A novel 3-D integrated RTD-HFET frequency multiplier</title><author>Auer, U. ; Janssen, G. ; Agethen, M. ; Reuter, R. ; Prost, W. ; Tegude, F.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-d511488cf70fe5d244c4d262867ca38600b57b5a97edbd87fc4953ffe66232493</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Circuit synthesis</topic><topic>Design optimization</topic><topic>Diodes</topic><topic>Frequency</topic><topic>HEMTs</topic><topic>MODFETs</topic><topic>Resonant tunneling devices</topic><topic>RLC circuits</topic><topic>Signal design</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Auer, U.</creatorcontrib><creatorcontrib>Janssen, G.</creatorcontrib><creatorcontrib>Agethen, M.</creatorcontrib><creatorcontrib>Reuter, R.</creatorcontrib><creatorcontrib>Prost, W.</creatorcontrib><creatorcontrib>Tegude, F.J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Auer, U.</au><au>Janssen, G.</au><au>Agethen, M.</au><au>Reuter, R.</au><au>Prost, W.</au><au>Tegude, F.J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A novel 3-D integrated RTD-HFET frequency multiplier</atitle><btitle>Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials</btitle><stitle>ICIPRM</stitle><date>1997</date><risdate>1997</risdate><spage>373</spage><epage>375</epage><pages>373-375</pages><issn>1092-8669</issn><isbn>9780780338982</isbn><isbn>0780338987</isbn><abstract>A frequency multiplier circuit using a resonant tunneling diode (RTD) as a load of a HFET is developed. Based on 3D-monolithic integration on a semi-insulating InP-substrate, a demonstrator is realised generating odd higher harmonics with high efficiency. The multiplier is highly compact and combines amplification of the fundamental frequency in the HFET with the high switching performance of the RTD. The Microwave Design System is used to evaluate its ultra high frequency potential predicting 0.115 times the voltage amplitude of the fundamental input signal for the third harmonic at 100 GHz. Optimization of the circuit design and the RTD-layer structure on top of the HFET with respect to the peak and valley parameters will increase the efficiency.</abstract><pub>IEEE</pub><doi>10.1109/ICIPRM.1997.600163</doi><tpages>3</tpages></addata></record>
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subjects Circuit synthesis
Design optimization
Diodes
Frequency
HEMTs
MODFETs
Resonant tunneling devices
RLC circuits
Signal design
Voltage
title A novel 3-D integrated RTD-HFET frequency multiplier
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-12T22%3A00%3A02IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20novel%203-D%20integrated%20RTD-HFET%20frequency%20multiplier&rft.btitle=Conference%20Proceedings.%201997%20International%20Conference%20on%20Indium%20Phosphide%20and%20Related%20Materials&rft.au=Auer,%20U.&rft.date=1997&rft.spage=373&rft.epage=375&rft.pages=373-375&rft.issn=1092-8669&rft.isbn=9780780338982&rft.isbn_list=0780338987&rft_id=info:doi/10.1109/ICIPRM.1997.600163&rft_dat=%3Cieee_6IE%3E600163%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=600163&rfr_iscdi=true