Dielectric property of Ion Beam Enhanced Deposited lithium tantalate thin film infrared detector

The Ion Beam Enhanced Deposited (IBED) LiTaO 3 thin film infrared detectors with Al/LiTaO 3 /Pt structure were prepared on the Pt/Ti/SiO 2 /Si(100) substrate. The crystallization, the film thickness, the dielectric properties, the leakage current and the anti-breakdown ability of the IBED LiTaO 3 th...

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Hauptverfasser: De-Yin Zhang, Wei Qian, Kun Li, Jian-Sheng Xie
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Wei Qian
Kun Li
Jian-Sheng Xie
description The Ion Beam Enhanced Deposited (IBED) LiTaO 3 thin film infrared detectors with Al/LiTaO 3 /Pt structure were prepared on the Pt/Ti/SiO 2 /Si(100) substrate. The crystallization, the film thickness, the dielectric properties, the leakage current and the anti-breakdown ability of the IBED LiTaO 3 thin film infrared detector samples were investigated by the different annealing processes. The XRD measured results show that, the prepared samples have the polycrystal structure of LiTaO 3 with the preferred orientation of ; and ; located at the 2theta of 23.6° and 32.7° respectively. The residual Ta 2 O 5 has been existed in the prepared samples owe to the Li volatilization during the high temperature annealing process. The obtained 587nm thick IBED LiTaO 3 thin film infrared detector sample annealed at 550°C has the dielectric permittivity of 39.44, the low dielectric loss of 0.045 at the tested frequency of 100 kHz, and the small current leakage of 4.76×10 -8 A/cm 2 when subjected to the tested electrical field of 400kV/cm. The electrical breakdown experimental results show that the prepared detector samples have strong ability of anti-breakdown and can be subjected to the stronggest electrical field of 680kV/cm. The experimental results show that, the dielectric loss and the leakage current of the IBED LiTaO 3 thin film infrared detectors are better than those of the Sol-Gel derived LiTaO 3 thin film infrared detectors.
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5986264</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5986264</ieee_id><sourcerecordid>5986264</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-8c00a2cd62929ba502ca31c3325276791848379d31fa8f740821a05afe71f0723</originalsourceid><addsrcrecordid>eNo9UEtOAzEUCz-JUnoAxCYXmJL3kpkky9IWqFTEpgt25TGTqEHzUyYsentGouCNbdnywozdgZgDCPuwWb4u5igA5rk1BRbqjN2AQqUMgNLnbIKQY6aVer9gM6vNXybx8j-TcM1mw_AlRhSFtYgT9rEKrnZliqHkfex6F9ORd55vupY_Omr4uj1QW7qKr1zfDSGNqg7pEL4bnqhNVFNyfPQt96FueGh9pDiWKpfG2S7esitP9eBmJ56y3dN6t3zJtm_Pm-VimwUrUmZKIQjLqkCL9pNygSVJKKXEHHWhLRhlpLaVBE_GayUMAomcvNPghUY5Zfe_s8E5t-9jaCge96ev5A-UR1ip</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Dielectric property of Ion Beam Enhanced Deposited lithium tantalate thin film infrared detector</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>De-Yin Zhang ; Wei Qian ; Kun Li ; Jian-Sheng Xie</creator><creatorcontrib>De-Yin Zhang ; Wei Qian ; Kun Li ; Jian-Sheng Xie</creatorcontrib><description>The Ion Beam Enhanced Deposited (IBED) LiTaO 3 thin film infrared detectors with Al/LiTaO 3 /Pt structure were prepared on the Pt/Ti/SiO 2 /Si(100) substrate. The crystallization, the film thickness, the dielectric properties, the leakage current and the anti-breakdown ability of the IBED LiTaO 3 thin film infrared detector samples were investigated by the different annealing processes. The XRD measured results show that, the prepared samples have the polycrystal structure of LiTaO 3 with the preferred orientation of &lt;;012&gt;; and &lt;;104&gt;; located at the 2theta of 23.6° and 32.7° respectively. The residual Ta 2 O 5 has been existed in the prepared samples owe to the Li volatilization during the high temperature annealing process. The obtained 587nm thick IBED LiTaO 3 thin film infrared detector sample annealed at 550°C has the dielectric permittivity of 39.44, the low dielectric loss of 0.045 at the tested frequency of 100 kHz, and the small current leakage of 4.76×10 -8 A/cm 2 when subjected to the tested electrical field of 400kV/cm. The electrical breakdown experimental results show that the prepared detector samples have strong ability of anti-breakdown and can be subjected to the stronggest electrical field of 680kV/cm. The experimental results show that, the dielectric loss and the leakage current of the IBED LiTaO 3 thin film infrared detectors are better than those of the Sol-Gel derived LiTaO 3 thin film infrared detectors.</description><identifier>ISSN: 2152-7431</identifier><identifier>ISBN: 9781424481132</identifier><identifier>ISBN: 1424481139</identifier><identifier>EISSN: 2152-744X</identifier><identifier>EISBN: 1424481147</identifier><identifier>EISBN: 9781424481149</identifier><identifier>EISBN: 1424481155</identifier><identifier>EISBN: 9781424481156</identifier><identifier>DOI: 10.1109/ICMA.2011.5986264</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Detectors ; Dielectric losses ; dielectric property ; IBED ; Infrared detectors ; Leakage current ; LiTaO 3 ; Lithium ; thin film</subject><ispartof>2011 IEEE International Conference on Mechatronics and Automation, 2011, p.1867-1871</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5986264$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5986264$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>De-Yin Zhang</creatorcontrib><creatorcontrib>Wei Qian</creatorcontrib><creatorcontrib>Kun Li</creatorcontrib><creatorcontrib>Jian-Sheng Xie</creatorcontrib><title>Dielectric property of Ion Beam Enhanced Deposited lithium tantalate thin film infrared detector</title><title>2011 IEEE International Conference on Mechatronics and Automation</title><addtitle>ICMA</addtitle><description>The Ion Beam Enhanced Deposited (IBED) LiTaO 3 thin film infrared detectors with Al/LiTaO 3 /Pt structure were prepared on the Pt/Ti/SiO 2 /Si(100) substrate. The crystallization, the film thickness, the dielectric properties, the leakage current and the anti-breakdown ability of the IBED LiTaO 3 thin film infrared detector samples were investigated by the different annealing processes. The XRD measured results show that, the prepared samples have the polycrystal structure of LiTaO 3 with the preferred orientation of &lt;;012&gt;; and &lt;;104&gt;; located at the 2theta of 23.6° and 32.7° respectively. The residual Ta 2 O 5 has been existed in the prepared samples owe to the Li volatilization during the high temperature annealing process. The obtained 587nm thick IBED LiTaO 3 thin film infrared detector sample annealed at 550°C has the dielectric permittivity of 39.44, the low dielectric loss of 0.045 at the tested frequency of 100 kHz, and the small current leakage of 4.76×10 -8 A/cm 2 when subjected to the tested electrical field of 400kV/cm. The electrical breakdown experimental results show that the prepared detector samples have strong ability of anti-breakdown and can be subjected to the stronggest electrical field of 680kV/cm. The experimental results show that, the dielectric loss and the leakage current of the IBED LiTaO 3 thin film infrared detectors are better than those of the Sol-Gel derived LiTaO 3 thin film infrared detectors.</description><subject>Annealing</subject><subject>Detectors</subject><subject>Dielectric losses</subject><subject>dielectric property</subject><subject>IBED</subject><subject>Infrared detectors</subject><subject>Leakage current</subject><subject>LiTaO 3</subject><subject>Lithium</subject><subject>thin film</subject><issn>2152-7431</issn><issn>2152-744X</issn><isbn>9781424481132</isbn><isbn>1424481139</isbn><isbn>1424481147</isbn><isbn>9781424481149</isbn><isbn>1424481155</isbn><isbn>9781424481156</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo9UEtOAzEUCz-JUnoAxCYXmJL3kpkky9IWqFTEpgt25TGTqEHzUyYsentGouCNbdnywozdgZgDCPuwWb4u5igA5rk1BRbqjN2AQqUMgNLnbIKQY6aVer9gM6vNXybx8j-TcM1mw_AlRhSFtYgT9rEKrnZliqHkfex6F9ORd55vupY_Omr4uj1QW7qKr1zfDSGNqg7pEL4bnqhNVFNyfPQt96FueGh9pDiWKpfG2S7esitP9eBmJ56y3dN6t3zJtm_Pm-VimwUrUmZKIQjLqkCL9pNygSVJKKXEHHWhLRhlpLaVBE_GayUMAomcvNPghUY5Zfe_s8E5t-9jaCge96ev5A-UR1ip</recordid><startdate>201108</startdate><enddate>201108</enddate><creator>De-Yin Zhang</creator><creator>Wei Qian</creator><creator>Kun Li</creator><creator>Jian-Sheng Xie</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201108</creationdate><title>Dielectric property of Ion Beam Enhanced Deposited lithium tantalate thin film infrared detector</title><author>De-Yin Zhang ; Wei Qian ; Kun Li ; Jian-Sheng Xie</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-8c00a2cd62929ba502ca31c3325276791848379d31fa8f740821a05afe71f0723</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Annealing</topic><topic>Detectors</topic><topic>Dielectric losses</topic><topic>dielectric property</topic><topic>IBED</topic><topic>Infrared detectors</topic><topic>Leakage current</topic><topic>LiTaO 3</topic><topic>Lithium</topic><topic>thin film</topic><toplevel>online_resources</toplevel><creatorcontrib>De-Yin Zhang</creatorcontrib><creatorcontrib>Wei Qian</creatorcontrib><creatorcontrib>Kun Li</creatorcontrib><creatorcontrib>Jian-Sheng Xie</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>De-Yin Zhang</au><au>Wei Qian</au><au>Kun Li</au><au>Jian-Sheng Xie</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Dielectric property of Ion Beam Enhanced Deposited lithium tantalate thin film infrared detector</atitle><btitle>2011 IEEE International Conference on Mechatronics and Automation</btitle><stitle>ICMA</stitle><date>2011-08</date><risdate>2011</risdate><spage>1867</spage><epage>1871</epage><pages>1867-1871</pages><issn>2152-7431</issn><eissn>2152-744X</eissn><isbn>9781424481132</isbn><isbn>1424481139</isbn><eisbn>1424481147</eisbn><eisbn>9781424481149</eisbn><eisbn>1424481155</eisbn><eisbn>9781424481156</eisbn><abstract>The Ion Beam Enhanced Deposited (IBED) LiTaO 3 thin film infrared detectors with Al/LiTaO 3 /Pt structure were prepared on the Pt/Ti/SiO 2 /Si(100) substrate. The crystallization, the film thickness, the dielectric properties, the leakage current and the anti-breakdown ability of the IBED LiTaO 3 thin film infrared detector samples were investigated by the different annealing processes. The XRD measured results show that, the prepared samples have the polycrystal structure of LiTaO 3 with the preferred orientation of &lt;;012&gt;; and &lt;;104&gt;; located at the 2theta of 23.6° and 32.7° respectively. The residual Ta 2 O 5 has been existed in the prepared samples owe to the Li volatilization during the high temperature annealing process. The obtained 587nm thick IBED LiTaO 3 thin film infrared detector sample annealed at 550°C has the dielectric permittivity of 39.44, the low dielectric loss of 0.045 at the tested frequency of 100 kHz, and the small current leakage of 4.76×10 -8 A/cm 2 when subjected to the tested electrical field of 400kV/cm. The electrical breakdown experimental results show that the prepared detector samples have strong ability of anti-breakdown and can be subjected to the stronggest electrical field of 680kV/cm. The experimental results show that, the dielectric loss and the leakage current of the IBED LiTaO 3 thin film infrared detectors are better than those of the Sol-Gel derived LiTaO 3 thin film infrared detectors.</abstract><pub>IEEE</pub><doi>10.1109/ICMA.2011.5986264</doi><tpages>5</tpages></addata></record>
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subjects Annealing
Detectors
Dielectric losses
dielectric property
IBED
Infrared detectors
Leakage current
LiTaO 3
Lithium
thin film
title Dielectric property of Ion Beam Enhanced Deposited lithium tantalate thin film infrared detector
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T22%3A46%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Dielectric%20property%20of%20Ion%20Beam%20Enhanced%20Deposited%20lithium%20tantalate%20thin%20film%20infrared%20detector&rft.btitle=2011%20IEEE%20International%20Conference%20on%20Mechatronics%20and%20Automation&rft.au=De-Yin%20Zhang&rft.date=2011-08&rft.spage=1867&rft.epage=1871&rft.pages=1867-1871&rft.issn=2152-7431&rft.eissn=2152-744X&rft.isbn=9781424481132&rft.isbn_list=1424481139&rft_id=info:doi/10.1109/ICMA.2011.5986264&rft_dat=%3Cieee_6IE%3E5986264%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1424481147&rft.eisbn_list=9781424481149&rft.eisbn_list=1424481155&rft.eisbn_list=9781424481156&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5986264&rfr_iscdi=true