Sol-gel deposition of PZT thin films on ceramic ZrO/sub 2/ substrates
Pb(Zr/sub 1-x/Ti/sub x/)O/sub 3/ thin films (x=0.55 and 0.85) were prepared on fine grained, polished ZrO/sub 2/ ceramic substrates by a sol-gel method. The high thermal expansion of ZrO/sub 2/ relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x=0.85 fil...
Gespeichert in:
| Hauptverfasser: | , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 614 vol.2 |
|---|---|
| container_issue | |
| container_start_page | 611 |
| container_title | |
| container_volume | 2 |
| creator | Brooks, K.G. Kohli, M. Taylor, D.V. Maeder, T. Reaney, I. Kholkin, A. Muralt, P. Setter, N. |
| description | Pb(Zr/sub 1-x/Ti/sub x/)O/sub 3/ thin films (x=0.55 and 0.85) were prepared on fine grained, polished ZrO/sub 2/ ceramic substrates by a sol-gel method. The high thermal expansion of ZrO/sub 2/ relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x=0.85 films, this reduction of thermal stress gives a preference of [001] over (100) oriented domains. For x=0.55 films, square P-E hysteresis loops were obtained with: P/sub r/=36 /spl mu/C/cm/sup 2/, and E/sub c/=45 kV/cm, at a field of 160 kV/cm. Pyroelectric figures of merit, defined as P//spl epsi/, of 0.93 were measured for a 4.0 /spl mu/m thick Pb(Zr/sub 0.15/Ti/sub 0.85/)O/sub 3/ film. The measured properties were comparable to those of highly (111) oriented films on Si. Thus, the [001] texture must be increased in order to realize improved properties. |
| doi_str_mv | 10.1109/ISAF.1996.598059 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_598059</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>598059</ieee_id><sourcerecordid>598059</sourcerecordid><originalsourceid>FETCH-LOGICAL-i619-28181a10ac041760bcf13119fa1375bf90922cd1aa40315c49e7e1b7d611148c3</originalsourceid><addsrcrecordid>eNotj71qwzAURgWl0DbNXjrpBWzfqx9LGkNI2kAghXjKEmRZalXsOEju0LevIT3LgTN88BHyglAigql2x9W2RGPqUhoN0tyRJ1AaOOdS4gNZ5vwNM0JKpuCRbI5jX3z6nnb-OuY4xfFCx0A_Tg2dvuKFhtgPmc7R-WSH6OgpHar801JW0Vl5Snby-ZncB9tnv_z3gjTbTbN-L_aHt916tS9ijaZgGjVaBOtAoKqhdQE5ogkWuZJtMGAYcx1aK4CjdMJ45bFVXY2IQju-IK-32ei9P19THGz6Pd9-8j-z6kaG</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Sol-gel deposition of PZT thin films on ceramic ZrO/sub 2/ substrates</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Brooks, K.G. ; Kohli, M. ; Taylor, D.V. ; Maeder, T. ; Reaney, I. ; Kholkin, A. ; Muralt, P. ; Setter, N.</creator><creatorcontrib>Brooks, K.G. ; Kohli, M. ; Taylor, D.V. ; Maeder, T. ; Reaney, I. ; Kholkin, A. ; Muralt, P. ; Setter, N.</creatorcontrib><description>Pb(Zr/sub 1-x/Ti/sub x/)O/sub 3/ thin films (x=0.55 and 0.85) were prepared on fine grained, polished ZrO/sub 2/ ceramic substrates by a sol-gel method. The high thermal expansion of ZrO/sub 2/ relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x=0.85 films, this reduction of thermal stress gives a preference of [001] over (100) oriented domains. For x=0.55 films, square P-E hysteresis loops were obtained with: P/sub r/=36 /spl mu/C/cm/sup 2/, and E/sub c/=45 kV/cm, at a field of 160 kV/cm. Pyroelectric figures of merit, defined as P//spl epsi/, of 0.93 were measured for a 4.0 /spl mu/m thick Pb(Zr/sub 0.15/Ti/sub 0.85/)O/sub 3/ film. The measured properties were comparable to those of highly (111) oriented films on Si. Thus, the [001] texture must be increased in order to realize improved properties.</description><identifier>ISBN: 0780333551</identifier><identifier>ISBN: 9780780333550</identifier><identifier>DOI: 10.1109/ISAF.1996.598059</identifier><language>eng</language><publisher>IEEE</publisher><subject>Ceramics ; Hysteresis ; Pyroelectricity ; Semiconductor films ; Sputtering ; Substrates ; Thermal expansion ; Thermal stresses ; Thickness measurement ; Transistors</subject><ispartof>ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics, 1996, Vol.2, p.611-614 vol.2</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/598059$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/598059$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Brooks, K.G.</creatorcontrib><creatorcontrib>Kohli, M.</creatorcontrib><creatorcontrib>Taylor, D.V.</creatorcontrib><creatorcontrib>Maeder, T.</creatorcontrib><creatorcontrib>Reaney, I.</creatorcontrib><creatorcontrib>Kholkin, A.</creatorcontrib><creatorcontrib>Muralt, P.</creatorcontrib><creatorcontrib>Setter, N.</creatorcontrib><title>Sol-gel deposition of PZT thin films on ceramic ZrO/sub 2/ substrates</title><title>ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics</title><addtitle>ISAF</addtitle><description>Pb(Zr/sub 1-x/Ti/sub x/)O/sub 3/ thin films (x=0.55 and 0.85) were prepared on fine grained, polished ZrO/sub 2/ ceramic substrates by a sol-gel method. The high thermal expansion of ZrO/sub 2/ relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x=0.85 films, this reduction of thermal stress gives a preference of [001] over (100) oriented domains. For x=0.55 films, square P-E hysteresis loops were obtained with: P/sub r/=36 /spl mu/C/cm/sup 2/, and E/sub c/=45 kV/cm, at a field of 160 kV/cm. Pyroelectric figures of merit, defined as P//spl epsi/, of 0.93 were measured for a 4.0 /spl mu/m thick Pb(Zr/sub 0.15/Ti/sub 0.85/)O/sub 3/ film. The measured properties were comparable to those of highly (111) oriented films on Si. Thus, the [001] texture must be increased in order to realize improved properties.</description><subject>Ceramics</subject><subject>Hysteresis</subject><subject>Pyroelectricity</subject><subject>Semiconductor films</subject><subject>Sputtering</subject><subject>Substrates</subject><subject>Thermal expansion</subject><subject>Thermal stresses</subject><subject>Thickness measurement</subject><subject>Transistors</subject><isbn>0780333551</isbn><isbn>9780780333550</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1996</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj71qwzAURgWl0DbNXjrpBWzfqx9LGkNI2kAghXjKEmRZalXsOEju0LevIT3LgTN88BHyglAigql2x9W2RGPqUhoN0tyRJ1AaOOdS4gNZ5vwNM0JKpuCRbI5jX3z6nnb-OuY4xfFCx0A_Tg2dvuKFhtgPmc7R-WSH6OgpHar801JW0Vl5Snby-ZncB9tnv_z3gjTbTbN-L_aHt916tS9ijaZgGjVaBOtAoKqhdQE5ogkWuZJtMGAYcx1aK4CjdMJ45bFVXY2IQju-IK-32ei9P19THGz6Pd9-8j-z6kaG</recordid><startdate>1996</startdate><enddate>1996</enddate><creator>Brooks, K.G.</creator><creator>Kohli, M.</creator><creator>Taylor, D.V.</creator><creator>Maeder, T.</creator><creator>Reaney, I.</creator><creator>Kholkin, A.</creator><creator>Muralt, P.</creator><creator>Setter, N.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1996</creationdate><title>Sol-gel deposition of PZT thin films on ceramic ZrO/sub 2/ substrates</title><author>Brooks, K.G. ; Kohli, M. ; Taylor, D.V. ; Maeder, T. ; Reaney, I. ; Kholkin, A. ; Muralt, P. ; Setter, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i619-28181a10ac041760bcf13119fa1375bf90922cd1aa40315c49e7e1b7d611148c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1996</creationdate><topic>Ceramics</topic><topic>Hysteresis</topic><topic>Pyroelectricity</topic><topic>Semiconductor films</topic><topic>Sputtering</topic><topic>Substrates</topic><topic>Thermal expansion</topic><topic>Thermal stresses</topic><topic>Thickness measurement</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Brooks, K.G.</creatorcontrib><creatorcontrib>Kohli, M.</creatorcontrib><creatorcontrib>Taylor, D.V.</creatorcontrib><creatorcontrib>Maeder, T.</creatorcontrib><creatorcontrib>Reaney, I.</creatorcontrib><creatorcontrib>Kholkin, A.</creatorcontrib><creatorcontrib>Muralt, P.</creatorcontrib><creatorcontrib>Setter, N.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Brooks, K.G.</au><au>Kohli, M.</au><au>Taylor, D.V.</au><au>Maeder, T.</au><au>Reaney, I.</au><au>Kholkin, A.</au><au>Muralt, P.</au><au>Setter, N.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Sol-gel deposition of PZT thin films on ceramic ZrO/sub 2/ substrates</atitle><btitle>ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics</btitle><stitle>ISAF</stitle><date>1996</date><risdate>1996</risdate><volume>2</volume><spage>611</spage><epage>614 vol.2</epage><pages>611-614 vol.2</pages><isbn>0780333551</isbn><isbn>9780780333550</isbn><abstract>Pb(Zr/sub 1-x/Ti/sub x/)O/sub 3/ thin films (x=0.55 and 0.85) were prepared on fine grained, polished ZrO/sub 2/ ceramic substrates by a sol-gel method. The high thermal expansion of ZrO/sub 2/ relative to Si allows the preparation of thicker PZT films with reduced thermal stress. For the x=0.85 films, this reduction of thermal stress gives a preference of [001] over (100) oriented domains. For x=0.55 films, square P-E hysteresis loops were obtained with: P/sub r/=36 /spl mu/C/cm/sup 2/, and E/sub c/=45 kV/cm, at a field of 160 kV/cm. Pyroelectric figures of merit, defined as P//spl epsi/, of 0.93 were measured for a 4.0 /spl mu/m thick Pb(Zr/sub 0.15/Ti/sub 0.85/)O/sub 3/ film. The measured properties were comparable to those of highly (111) oriented films on Si. Thus, the [001] texture must be increased in order to realize improved properties.</abstract><pub>IEEE</pub><doi>10.1109/ISAF.1996.598059</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 0780333551 |
| ispartof | ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics, 1996, Vol.2, p.611-614 vol.2 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_598059 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Ceramics Hysteresis Pyroelectricity Semiconductor films Sputtering Substrates Thermal expansion Thermal stresses Thickness measurement Transistors |
| title | Sol-gel deposition of PZT thin films on ceramic ZrO/sub 2/ substrates |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T15%3A13%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Sol-gel%20deposition%20of%20PZT%20thin%20films%20on%20ceramic%20ZrO/sub%202/%20substrates&rft.btitle=ISAF%20'96.%20Proceedings%20of%20the%20Tenth%20IEEE%20International%20Symposium%20on%20Applications%20of%20Ferroelectrics&rft.au=Brooks,%20K.G.&rft.date=1996&rft.volume=2&rft.spage=611&rft.epage=614%20vol.2&rft.pages=611-614%20vol.2&rft.isbn=0780333551&rft.isbn_list=9780780333550&rft_id=info:doi/10.1109/ISAF.1996.598059&rft_dat=%3Cieee_6IE%3E598059%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=598059&rfr_iscdi=true |