Microwave properties of suspended single-walled carbon nanotubes with a field-effect transistor configuration

In this paper, microwave transmission properties of suspended single-walled carbon nanotubes (SWCNTs) have been investigated up to 7.1 GHz with a field-effect transistor (FET) configuration by measuring the two-port S-parameters under different gate bias voltages. An open-through de-embedding method...

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Hauptverfasser: Mingguang Tuo, Lu Wang, Amer, Moh R., Xiaoju Yu, Cronin, Stephen B., Hao Xin
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Lu Wang
Amer, Moh R.
Xiaoju Yu
Cronin, Stephen B.
Hao Xin
description In this paper, microwave transmission properties of suspended single-walled carbon nanotubes (SWCNTs) have been investigated up to 7.1 GHz with a field-effect transistor (FET) configuration by measuring the two-port S-parameters under different gate bias voltages. An open-through de-embedding method has been used to extract the intrinsic properties of CNTs. A lumped-element equivalent circuit model has been used and the values of each component have been fitted as a function of gate bias voltage.
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subjects Carbon nanotubes
Carbon nanotubes (CNTs)
de-embedding
equivalent circuit model
Equivalent circuits
field-effect transistor (FET)
Integrated circuit modeling
Logic gates
Microwave circuits
Microwave measurements
S-parameters
tapered transmission line
Voltage measurement
title Microwave properties of suspended single-walled carbon nanotubes with a field-effect transistor configuration
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