Fast physical models for Si LDMOS power transistor characterization

A new quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form. This process-oriented nonlinear model accou...

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Bibliographische Detailangaben

Hauptverfasser:	Everett, John P., Kearney, Michael J., Rueda, Hernan A., Johnson, Eric M., Aaen, Peter H., Wood, John, Snowden, Christopher M.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Field Effect transistor (FET) Integrated circuit modeling laterally diffused MOS (LDMOS) Logic gates Mathematical model Microwave FETs quasi-two-dimensional (Q2D) Solid modeling transistor model
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