Fast physical models for Si LDMOS power transistor characterization
A new quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form. This process-oriented nonlinear model accou...
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| creator | Everett, John P. Kearney, Michael J. Rueda, Hernan A. Johnson, Eric M. Aaen, Peter H. Wood, John Snowden, Christopher M. |
| description | A new quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form. This process-oriented nonlinear model accounts for thermal effects, avalanche breakdown and gate conduction. It accurately predicts DC and microwave characteristics as demonstrated by comparison with measured DC characteristics, transconductance, forward gain, S 21 , and large-signal gate and drain charges for a LDMOS transistor. The model is fast, taking less than 30 ms to extract a 50 point DC I DS -V DS characteristic and less than 5 ms to produce S-parameters at a single frequency. |
| doi_str_mv | 10.1109/MWSYM.2011.5972839 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5972839</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5972839</ieee_id><sourcerecordid>5972839</sourcerecordid><originalsourceid>FETCH-LOGICAL-i1349-11a3225af6eac9f4fa9a8678be81ff01825d40a14473bbb66ad34fee1b8014fd3</originalsourceid><addsrcrecordid>eNpFkE1Lw0AYhNcvsNb-Ab3sH0jdd7-ye5RoVUjooYp6Km-SXbrSNmE3IPXXG7DgXObwwDAzhNwAmwMwe1e9rz6rOWcAc2VzboQ9IVeggRuZK8VPyYSrXGc5B332D6Q8JxMG0mZaqo9LMkvpi43S2lolJqRYYBpovzmk0OCW7rrWbRP1XaSrQMuHarmiffftIh0i7lNIw0iaDUZsBhfDDw6h21-TC4_b5GZHn5K3xeNr8ZyVy6eX4r7MAoixAAAKzhV67bCxXnq0aHRuamfAewaGq1YyBClzUde11tgK6Z2D2owDfCum5PYvNzjn1n0MO4yH9fEM8Qv4AE94</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Fast physical models for Si LDMOS power transistor characterization</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Everett, John P. ; Kearney, Michael J. ; Rueda, Hernan A. ; Johnson, Eric M. ; Aaen, Peter H. ; Wood, John ; Snowden, Christopher M.</creator><creatorcontrib>Everett, John P. ; Kearney, Michael J. ; Rueda, Hernan A. ; Johnson, Eric M. ; Aaen, Peter H. ; Wood, John ; Snowden, Christopher M.</creatorcontrib><description>A new quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form. This process-oriented nonlinear model accounts for thermal effects, avalanche breakdown and gate conduction. It accurately predicts DC and microwave characteristics as demonstrated by comparison with measured DC characteristics, transconductance, forward gain, S 21 , and large-signal gate and drain charges for a LDMOS transistor. The model is fast, taking less than 30 ms to extract a 50 point DC I DS -V DS characteristic and less than 5 ms to produce S-parameters at a single frequency.</description><identifier>ISSN: 0149-645X</identifier><identifier>ISBN: 1612847544</identifier><identifier>ISBN: 9781612847542</identifier><identifier>EISSN: 2576-7216</identifier><identifier>EISBN: 1612847552</identifier><identifier>EISBN: 9781612847566</identifier><identifier>EISBN: 9781612847573</identifier><identifier>EISBN: 9781612847559</identifier><identifier>EISBN: 1612847579</identifier><identifier>EISBN: 1612847560</identifier><identifier>DOI: 10.1109/MWSYM.2011.5972839</identifier><language>eng</language><publisher>IEEE</publisher><subject>Field Effect transistor (FET) ; Integrated circuit modeling ; laterally diffused MOS (LDMOS) ; Logic gates ; Mathematical model ; Microwave FETs ; quasi-two-dimensional (Q2D) ; Solid modeling ; transistor model</subject><ispartof>2011 IEEE MTT-S International Microwave Symposium, 2011, p.1-4</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5972839$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5972839$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Everett, John P.</creatorcontrib><creatorcontrib>Kearney, Michael J.</creatorcontrib><creatorcontrib>Rueda, Hernan A.</creatorcontrib><creatorcontrib>Johnson, Eric M.</creatorcontrib><creatorcontrib>Aaen, Peter H.</creatorcontrib><creatorcontrib>Wood, John</creatorcontrib><creatorcontrib>Snowden, Christopher M.</creatorcontrib><title>Fast physical models for Si LDMOS power transistor characterization</title><title>2011 IEEE MTT-S International Microwave Symposium</title><addtitle>MWSYM</addtitle><description>A new quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form. This process-oriented nonlinear model accounts for thermal effects, avalanche breakdown and gate conduction. It accurately predicts DC and microwave characteristics as demonstrated by comparison with measured DC characteristics, transconductance, forward gain, S 21 , and large-signal gate and drain charges for a LDMOS transistor. The model is fast, taking less than 30 ms to extract a 50 point DC I DS -V DS characteristic and less than 5 ms to produce S-parameters at a single frequency.</description><subject>Field Effect transistor (FET)</subject><subject>Integrated circuit modeling</subject><subject>laterally diffused MOS (LDMOS)</subject><subject>Logic gates</subject><subject>Mathematical model</subject><subject>Microwave FETs</subject><subject>quasi-two-dimensional (Q2D)</subject><subject>Solid modeling</subject><subject>transistor model</subject><issn>0149-645X</issn><issn>2576-7216</issn><isbn>1612847544</isbn><isbn>9781612847542</isbn><isbn>1612847552</isbn><isbn>9781612847566</isbn><isbn>9781612847573</isbn><isbn>9781612847559</isbn><isbn>1612847579</isbn><isbn>1612847560</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFkE1Lw0AYhNcvsNb-Ab3sH0jdd7-ye5RoVUjooYp6Km-SXbrSNmE3IPXXG7DgXObwwDAzhNwAmwMwe1e9rz6rOWcAc2VzboQ9IVeggRuZK8VPyYSrXGc5B332D6Q8JxMG0mZaqo9LMkvpi43S2lolJqRYYBpovzmk0OCW7rrWbRP1XaSrQMuHarmiffftIh0i7lNIw0iaDUZsBhfDDw6h21-TC4_b5GZHn5K3xeNr8ZyVy6eX4r7MAoixAAAKzhV67bCxXnq0aHRuamfAewaGq1YyBClzUde11tgK6Z2D2owDfCum5PYvNzjn1n0MO4yH9fEM8Qv4AE94</recordid><startdate>201106</startdate><enddate>201106</enddate><creator>Everett, John P.</creator><creator>Kearney, Michael J.</creator><creator>Rueda, Hernan A.</creator><creator>Johnson, Eric M.</creator><creator>Aaen, Peter H.</creator><creator>Wood, John</creator><creator>Snowden, Christopher M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201106</creationdate><title>Fast physical models for Si LDMOS power transistor characterization</title><author>Everett, John P. ; Kearney, Michael J. ; Rueda, Hernan A. ; Johnson, Eric M. ; Aaen, Peter H. ; Wood, John ; Snowden, Christopher M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i1349-11a3225af6eac9f4fa9a8678be81ff01825d40a14473bbb66ad34fee1b8014fd3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Field Effect transistor (FET)</topic><topic>Integrated circuit modeling</topic><topic>laterally diffused MOS (LDMOS)</topic><topic>Logic gates</topic><topic>Mathematical model</topic><topic>Microwave FETs</topic><topic>quasi-two-dimensional (Q2D)</topic><topic>Solid modeling</topic><topic>transistor model</topic><toplevel>online_resources</toplevel><creatorcontrib>Everett, John P.</creatorcontrib><creatorcontrib>Kearney, Michael J.</creatorcontrib><creatorcontrib>Rueda, Hernan A.</creatorcontrib><creatorcontrib>Johnson, Eric M.</creatorcontrib><creatorcontrib>Aaen, Peter H.</creatorcontrib><creatorcontrib>Wood, John</creatorcontrib><creatorcontrib>Snowden, Christopher M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Everett, John P.</au><au>Kearney, Michael J.</au><au>Rueda, Hernan A.</au><au>Johnson, Eric M.</au><au>Aaen, Peter H.</au><au>Wood, John</au><au>Snowden, Christopher M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Fast physical models for Si LDMOS power transistor characterization</atitle><btitle>2011 IEEE MTT-S International Microwave Symposium</btitle><stitle>MWSYM</stitle><date>2011-06</date><risdate>2011</risdate><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>0149-645X</issn><eissn>2576-7216</eissn><isbn>1612847544</isbn><isbn>9781612847542</isbn><eisbn>1612847552</eisbn><eisbn>9781612847566</eisbn><eisbn>9781612847573</eisbn><eisbn>9781612847559</eisbn><eisbn>1612847579</eisbn><eisbn>1612847560</eisbn><abstract>A new quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a "current-driven" form. This process-oriented nonlinear model accounts for thermal effects, avalanche breakdown and gate conduction. It accurately predicts DC and microwave characteristics as demonstrated by comparison with measured DC characteristics, transconductance, forward gain, S 21 , and large-signal gate and drain charges for a LDMOS transistor. The model is fast, taking less than 30 ms to extract a 50 point DC I DS -V DS characteristic and less than 5 ms to produce S-parameters at a single frequency.</abstract><pub>IEEE</pub><doi>10.1109/MWSYM.2011.5972839</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| identifier | ISSN: 0149-645X |
| ispartof | 2011 IEEE MTT-S International Microwave Symposium, 2011, p.1-4 |
| issn | 0149-645X 2576-7216 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Field Effect transistor (FET) Integrated circuit modeling laterally diffused MOS (LDMOS) Logic gates Mathematical model Microwave FETs quasi-two-dimensional (Q2D) Solid modeling transistor model |
| title | Fast physical models for Si LDMOS power transistor characterization |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T23%3A30%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Fast%20physical%20models%20for%20Si%20LDMOS%20power%20transistor%20characterization&rft.btitle=2011%20IEEE%20MTT-S%20International%20Microwave%20Symposium&rft.au=Everett,%20John%20P.&rft.date=2011-06&rft.spage=1&rft.epage=4&rft.pages=1-4&rft.issn=0149-645X&rft.eissn=2576-7216&rft.isbn=1612847544&rft.isbn_list=9781612847542&rft_id=info:doi/10.1109/MWSYM.2011.5972839&rft_dat=%3Cieee_6IE%3E5972839%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=1612847552&rft.eisbn_list=9781612847566&rft.eisbn_list=9781612847573&rft.eisbn_list=9781612847559&rft.eisbn_list=1612847579&rft.eisbn_list=1612847560&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5972839&rfr_iscdi=true |