A 24-GHz low-noise amplifier co-designed with ESD protection using junction varactors in 65-nm RF CMOS

By means of co-designed methodology, a 24-GHz low-noise amplifier, utilizing junction varactors as ESD protection, is first demonstrated by a 65-nm CMOS technology. The ESD protection capability of the junction varactors with multi-finger topology is characterized in details by transmission line pul...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Ming-Hsien Tsai, Hsu, Shawn S. H., Fu-Lung Hsueh, Chewn-Pu Jou, Tzu-Jin Yeh, Jun-De Jin, Hsieh-Hung Hsieh
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS integrated circuits CMOS technology Electrostatic discharge electrostatic discharge (ESD) junction varactor Junctions low-noise amplifier (LNA) Low-noise amplifiers Radio frequency radio frequency (RF) Varactors
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