Effect of illlumination on thermionic emission from microfabricated silicon carbide structures
Microfabricated thermionic emitters form a crucial part of thermionic energy converters, which could find applications in future concentrated solar thermal power plants. Here we report a new stress-relieved design for p-doped and n-doped silicon carbide (SiC) emitters, measurements of their thermion...
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| creator | Lee, J.-H Bargatin, I. Provine, J. Liu, F. Seo, M.-K Maboudian, R. Brongersma, M. L. L. Melosh, N. A. Shen, Z. X. Howe, R. T. |
| description | Microfabricated thermionic emitters form a crucial part of thermionic energy converters, which could find applications in future concentrated solar thermal power plants. Here we report a new stress-relieved design for p-doped and n-doped silicon carbide (SiC) emitters, measurements of their thermionic emission and work functions at temperatures of up to 2900K, and the effect of optical irradiation on both types of SiC emitters. We also report the first observation of the photon-enhanced thermionic emission (PETE) in a thin-film microfabricated emitter. |
| doi_str_mv | 10.1109/TRANSDUCERS.2011.5969879 |
| format | Conference Proceeding |
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T.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Effect of illlumination on thermionic emission from microfabricated silicon carbide structures</atitle><btitle>2011 16th International Solid-State Sensors, Actuators and Microsystems Conference</btitle><stitle>TRANSDUCERS</stitle><date>2011-06</date><risdate>2011</risdate><spage>2658</spage><epage>2661</epage><pages>2658-2661</pages><issn>2159-547X</issn><isbn>9781457701573</isbn><isbn>145770157X</isbn><eisbn>1457701553</eisbn><eisbn>9781457701566</eisbn><eisbn>1457701561</eisbn><eisbn>9781457701559</eisbn><abstract>Microfabricated thermionic emitters form a crucial part of thermionic energy converters, which could find applications in future concentrated solar thermal power plants. Here we report a new stress-relieved design for p-doped and n-doped silicon carbide (SiC) emitters, measurements of their thermionic emission and work functions at temperatures of up to 2900K, and the effect of optical irradiation on both types of SiC emitters. We also report the first observation of the photon-enhanced thermionic emission (PETE) in a thin-film microfabricated emitter.</abstract><pub>IEEE</pub><doi>10.1109/TRANSDUCERS.2011.5969879</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 2159-547X |
| ispartof | 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, 2011, p.2658-2661 |
| issn | 2159-547X |
| language | eng |
| recordid | cdi_ieee_primary_5969879 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Heating hermionic Energy Conversion igh-Temperature MEMS ilicon Carbide olar Electricity Generation Optical variables measurement Photonics Silicon carbide Stimulated emission Temperature measurement Thermionic emission |
| title | Effect of illlumination on thermionic emission from microfabricated silicon carbide structures |
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