A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations

We investigate and quantify the role played by electrons and holes during the erase operation of TANOS memories by means of charge separation experiments and physics-based simulations. Results demonstrate that electron emission via trap-to-band tunneling dominates the first part of the erase operati...

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Veröffentlicht in:	IEEE transactions on electron devices 2011-09, Vol.58 (9), p.3147-3155
Hauptverfasser:	Padovani, A., Arreghini, A., Vandelli, L., Larcher, L., Van den bosch, G., Pavan, P., Van Houdt, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Applied sciences Charge Charge separation (CS) charge-trapping devices Current measurement device modeling device physics Devices Electron traps Electronics erase efficiency Exact sciences and technology Guidelines Logic gates Magnetic and optical mass memories Mathematical model nitride Optimization Separation Simulation Storage and reproduction of information Substrates TANOS erase TANOS memories Transient analysis Valence band
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