A new method for improving breakdown voltage in PSOI MOSFETs using variable drift region doping concentration

In this paper for the first time, a novel partial SOI LDMOS with variable drift region doping concentration (VDRDC-PSOI) has been proposed. The introduced doping regions in the partial buried oxide enhance peaks of the electric field to achieve maximum breakdown voltage. We demonstrate that the elec...

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Bibliographische Detailangaben

Hauptverfasser:	Mahabadi, S. E. J., Orouji, A. A., Moghadam, H. A., Keshavarzi, P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Analytical models breakdown voltage conventional partial SOI Doping Electric fields Heating Metal Oxide Semiconductor field effect transistor Partial-silicon-on-insulator Silicon Silicon on insulator technology Substrates two dimensional (2-D) simulation
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