Design of three-terminal GaN light emitting HBT for free space communication

This abstract presents design and simulation results of a GaN-based multi-quantum well (MQW) heterojunction transistor (HBT) LED. The combination of the narrow base and collector terminal allows a very fast turn-off delay in the device.

Bibliographische Detailangaben

Hauptverfasser:	Shengling Deng, Huang, Z. Rena
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Delay Gallium nitride Heterojunction bipolar transistors Integrated optics Light emitting diodes Lighting Optical pulses
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