Temperature-dependent reverse leakage current characterization of n-GaN Schottky diodes
n-GaN Schottky barrier diodes were fabricated on a sapphire substrate. Ni/Au and Ti/Al/Mo/Au were used for Schottky and ohmic contacts, respectively. A better fitted characteristic was obtained by calculation of thermionic-field emission. Similar comparison was made for current-voltage characteristi...
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| creator | Saito, T. Nitanda, K. Syahiman, A. Tokuda, H. Kuzuhara, M. |
| description | n-GaN Schottky barrier diodes were fabricated on a sapphire substrate. Ni/Au and Ti/Al/Mo/Au were used for Schottky and ohmic contacts, respectively. A better fitted characteristic was obtained by calculation of thermionic-field emission. Similar comparison was made for current-voltage characteristics measured at high temperatures up to 523 K. With the increase in the device temperature, better fitting was obtained with a thermionic emission theory. |
| doi_str_mv | 10.1109/IMFEDK.2011.5944854 |
| format | Conference Proceeding |
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Ni/Au and Ti/Al/Mo/Au were used for Schottky and ohmic contacts, respectively. A better fitted characteristic was obtained by calculation of thermionic-field emission. Similar comparison was made for current-voltage characteristics measured at high temperatures up to 523 K. With the increase in the device temperature, better fitting was obtained with a thermionic emission theory.</description><subject>Current measurement</subject><subject>GaN</subject><subject>Plasma temperature</subject><subject>Schottky barrier diodes</subject><subject>Schottky barriers</subject><subject>Schottky diodes</subject><subject>Temperature</subject><subject>Temperature measurement</subject><subject>thermionic-field emission</subject><subject>Voltage measurement</subject><isbn>1612841457</isbn><isbn>9781612841458</isbn><isbn>9781612841472</isbn><isbn>1612841473</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kEtOwzAYhI0QElBygm58gQTbsRN7iUpfosCCSCwrP35T0zaJHBepnJ4iympmPo1mMQiNKSkoJep--TybPj4VjFBaCMW5FPwCZaqWtKJMcsprdolu_4Oor1E2DJ-EnPqkUoTdoPcG9j1EnQ4Rcgc9tA7ahCN8QRwA70Bv9Qdge4jxl9uNjtomiOFbp9C1uPO4zef6Bb_ZTZfS9ohd6BwMd-jK690A2VlHqJlNm8kiX73Ol5OHVR4USTnTXFhaCastId7Y0nBDDS0Fo9Yxf_LSK2lEbUnlFJFGce9lySrurfa2LEdo_DcbAGDdx7DX8bg-X1H-APq5VHs</recordid><startdate>201105</startdate><enddate>201105</enddate><creator>Saito, T.</creator><creator>Nitanda, K.</creator><creator>Syahiman, A.</creator><creator>Tokuda, H.</creator><creator>Kuzuhara, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201105</creationdate><title>Temperature-dependent reverse leakage current characterization of n-GaN Schottky diodes</title><author>Saito, T. ; Nitanda, K. ; Syahiman, A. ; Tokuda, H. ; Kuzuhara, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-2a45c165cac00fbc3b4b1b13521cd2fb1b8f98b57c06d908b94ff83264fcafc33</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Current measurement</topic><topic>GaN</topic><topic>Plasma temperature</topic><topic>Schottky barrier diodes</topic><topic>Schottky barriers</topic><topic>Schottky diodes</topic><topic>Temperature</topic><topic>Temperature measurement</topic><topic>thermionic-field emission</topic><topic>Voltage measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Saito, T.</creatorcontrib><creatorcontrib>Nitanda, K.</creatorcontrib><creatorcontrib>Syahiman, A.</creatorcontrib><creatorcontrib>Tokuda, H.</creatorcontrib><creatorcontrib>Kuzuhara, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Saito, T.</au><au>Nitanda, K.</au><au>Syahiman, A.</au><au>Tokuda, H.</au><au>Kuzuhara, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Temperature-dependent reverse leakage current characterization of n-GaN Schottky diodes</atitle><btitle>2011 International Meeting for Future of Electron Devices</btitle><stitle>IMFEDK</stitle><date>2011-05</date><risdate>2011</risdate><spage>80</spage><epage>81</epage><pages>80-81</pages><isbn>1612841457</isbn><isbn>9781612841458</isbn><eisbn>9781612841472</eisbn><eisbn>1612841473</eisbn><abstract>n-GaN Schottky barrier diodes were fabricated on a sapphire substrate. Ni/Au and Ti/Al/Mo/Au were used for Schottky and ohmic contacts, respectively. A better fitted characteristic was obtained by calculation of thermionic-field emission. Similar comparison was made for current-voltage characteristics measured at high temperatures up to 523 K. With the increase in the device temperature, better fitting was obtained with a thermionic emission theory.</abstract><pub>IEEE</pub><doi>10.1109/IMFEDK.2011.5944854</doi><tpages>2</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Current measurement GaN Plasma temperature Schottky barrier diodes Schottky barriers Schottky diodes Temperature Temperature measurement thermionic-field emission Voltage measurement |
| title | Temperature-dependent reverse leakage current characterization of n-GaN Schottky diodes |
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