Advanced floating gate CD uniformity control in the 75nm node NOR flash memory

This paper describes the advanced control technology of critical dimension uniformity (CDU) by flash gate stack etch process. We have investigated the effective way of utilizing Tri-layer approach, which not only reduces the influence of topology step-height but also improves the range of ECD within...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Sheng-Yuan Chang, Yu-Chung Chen, An Chyi Wei, Hong-Ji Lee, Nan-Tzu Lian, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Chemistry Critical dimension uniformity (CDU) Etching flash gate stack etch Flash memory Logic gates Plasmas Polymers Tri-layer approach
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