Silicon bipolar VCO family for 1.1 to 2.2 GHz with fully-integrated tank and tuning circuits

This work introduces fully-integrated VCOs implemented in the mature ISOSAT silicon bipolar RFIC process. The ISOSAT silicon bipolar process has transistors with 15GHz f/sub T/ and 30GHz f/sub max/, along with MIS capacitors of Q > 50 and spiral inductors with Q up to 10 for the values and freque...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Jansen, S., Negus, K., Lee, D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance Capacitors Frequency Inductors Radiofrequency integrated circuits Silicon Spirals Varactors Voltage Voltage-controlled oscillators
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