The impact of stochastic dopant and interconnect distributions on gigascale integration
Opportunities for GSI are governed by a hierarchy of physical limits whose five levels can be codified as: fundamental, material, device, circuit, and system. This distinctive methodology is extended here by elucidating the impact on GSI of random dopant atom placement in the channel region of a MOS...
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| creator | Meindl, J.D. De, V.K. Wills, D.S. Eble, J.C. Xinghai Tang Davis, J.A. Austin, B. Bhavnagarwala, A.J. |
| description | Opportunities for GSI are governed by a hierarchy of physical limits whose five levels can be codified as: fundamental, material, device, circuit, and system. This distinctive methodology is extended here by elucidating the impact on GSI of random dopant atom placement in the channel region of a MOSFET and of interconnect distributions in random logic networks in context with projected advances in device and circuit techniques. |
| doi_str_mv | 10.1109/ISSCC.1997.585366 |
| format | Conference Proceeding |
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| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0193-6530 |
| ispartof | 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers, 1997, Vol.40, p.232-233 |
| issn | 0193-6530 2376-8606 |
| language | eng |
| recordid | cdi_ieee_primary_585366 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuit simulation CMOS logic circuits CMOS technology Doping profiles Integrated circuit interconnections Logic circuits Logic devices MOSFET circuits Stochastic processes Threshold voltage |
| title | The impact of stochastic dopant and interconnect distributions on gigascale integration |
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