42 GHz static frequency divider in a Si/SiGe bipolar technology
Frequency dividers are key components for multi-gigabit-per-second optical fiber links. For this application, maximum speed is mandatory, while the power consumption is not a limiting factor. To date, the highest operating speed for static frequency dividers has been achieved with III-V devices. For...
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creator | Wurzer, M. Meister, T.F. Schafer, I. Knapp, H. Bock, J. Stengl, R. Aufinger, K. Franosch, M. Rest, M. Moller, M. Rein, H.-M. Felder, A. |
description | Frequency dividers are key components for multi-gigabit-per-second optical fiber links. For this application, maximum speed is mandatory, while the power consumption is not a limiting factor. To date, the highest operating speed for static frequency dividers has been achieved with III-V devices. For AlInAs/GaInAs HBTs with 130 GHz f/sub T/, 39.5 GHz operation is measured, and for 0.1 /spl mu/m InAlAs/InGaAs HEMTs with f/sub T/ of approximately 200 GHz an operating speed of 40.4 GHz is recently reported. The fastest published static silicon divider operates up to 35 GHz. Silicon bipolar technologies offer high reliability and cost-effectiveness. This divider is fabricated in a 0.5 /spl mu/m double-polysilicon self-aligned Si/SiGe heterojunction bipolar technology. |
doi_str_mv | 10.1109/ISSCC.1997.585293 |
format | Conference Proceeding |
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For this application, maximum speed is mandatory, while the power consumption is not a limiting factor. To date, the highest operating speed for static frequency dividers has been achieved with III-V devices. For AlInAs/GaInAs HBTs with 130 GHz f/sub T/, 39.5 GHz operation is measured, and for 0.1 /spl mu/m InAlAs/InGaAs HEMTs with f/sub T/ of approximately 200 GHz an operating speed of 40.4 GHz is recently reported. The fastest published static silicon divider operates up to 35 GHz. Silicon bipolar technologies offer high reliability and cost-effectiveness. 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This divider is fabricated in a 0.5 /spl mu/m double-polysilicon self-aligned Si/SiGe heterojunction bipolar technology.</description><subject>Energy consumption</subject><subject>Frequency conversion</subject><subject>Gain measurement</subject><subject>Germanium silicon alloys</subject><subject>III-V semiconductor materials</subject><subject>Indium compounds</subject><subject>Optical fibers</subject><subject>Optical frequency conversion</subject><subject>Silicon germanium</subject><subject>Velocity measurement</subject><issn>0193-6530</issn><issn>2376-8606</issn><isbn>9780780337213</isbn><isbn>0780337212</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1997</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotUE1Lw0AUXPwAa-0P0NOevKV9m7efJ5GgbaHgIXoO2-2LrqRJzUah_noDFWaYOcx7DMPYrYC5EOAW67IsirlwzsyVVbnDMzbJ0ejMatDnbOaMhRGIJhd4wSYgHGZaIVyx65Q-AUA5bSfsQeZ8ufrlafBDDLzu6eub2nDku_gTd9Tz2HLPy7go45L4Nh66xvd8oPDRdk33frxhl7VvEs3-dcrenp9ei1W2eVmui8dNFoWwQ1Z7YzxKYwMKTShqDcZ5MKBGtyMP5ChIHaySuZMCZRC1cl7WI-VWW5yy-9PfQ9-NDdNQ7WMK1DS-pe47VbmWBsV4OWV3p2AkourQx73vj9VpI_wDenlWlg</recordid><startdate>19970101</startdate><enddate>19970101</enddate><creator>Wurzer, M.</creator><creator>Meister, T.F.</creator><creator>Schafer, I.</creator><creator>Knapp, H.</creator><creator>Bock, J.</creator><creator>Stengl, R.</creator><creator>Aufinger, K.</creator><creator>Franosch, M.</creator><creator>Rest, M.</creator><creator>Moller, M.</creator><creator>Rein, H.-M.</creator><creator>Felder, A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>7SC</scope><scope>7U5</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>19970101</creationdate><title>42 GHz static frequency divider in a Si/SiGe bipolar technology</title><author>Wurzer, M. ; Meister, T.F. ; Schafer, I. ; Knapp, H. ; Bock, J. ; Stengl, R. ; Aufinger, K. ; Franosch, M. ; Rest, M. ; Moller, M. ; Rein, H.-M. ; Felder, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i118t-fa77a3478c316e31f6079a0705f60dea0e9ec46c854294134c1f59a4f9a44b683</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Energy consumption</topic><topic>Frequency conversion</topic><topic>Gain measurement</topic><topic>Germanium silicon alloys</topic><topic>III-V semiconductor materials</topic><topic>Indium compounds</topic><topic>Optical fibers</topic><topic>Optical frequency conversion</topic><topic>Silicon germanium</topic><topic>Velocity measurement</topic><toplevel>online_resources</toplevel><creatorcontrib>Wurzer, M.</creatorcontrib><creatorcontrib>Meister, T.F.</creatorcontrib><creatorcontrib>Schafer, I.</creatorcontrib><creatorcontrib>Knapp, H.</creatorcontrib><creatorcontrib>Bock, J.</creatorcontrib><creatorcontrib>Stengl, R.</creatorcontrib><creatorcontrib>Aufinger, K.</creatorcontrib><creatorcontrib>Franosch, M.</creatorcontrib><creatorcontrib>Rest, M.</creatorcontrib><creatorcontrib>Moller, M.</creatorcontrib><creatorcontrib>Rein, H.-M.</creatorcontrib><creatorcontrib>Felder, A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>Computer and Information Systems Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wurzer, M.</au><au>Meister, T.F.</au><au>Schafer, I.</au><au>Knapp, H.</au><au>Bock, J.</au><au>Stengl, R.</au><au>Aufinger, K.</au><au>Franosch, M.</au><au>Rest, M.</au><au>Moller, M.</au><au>Rein, H.-M.</au><au>Felder, A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>42 GHz static frequency divider in a Si/SiGe bipolar technology</atitle><btitle>1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers</btitle><stitle>ISSCC</stitle><date>1997-01-01</date><risdate>1997</risdate><volume>40</volume><spage>122</spage><epage>123</epage><pages>122-123</pages><issn>0193-6530</issn><eissn>2376-8606</eissn><isbn>9780780337213</isbn><isbn>0780337212</isbn><abstract>Frequency dividers are key components for multi-gigabit-per-second optical fiber links. For this application, maximum speed is mandatory, while the power consumption is not a limiting factor. To date, the highest operating speed for static frequency dividers has been achieved with III-V devices. For AlInAs/GaInAs HBTs with 130 GHz f/sub T/, 39.5 GHz operation is measured, and for 0.1 /spl mu/m InAlAs/InGaAs HEMTs with f/sub T/ of approximately 200 GHz an operating speed of 40.4 GHz is recently reported. The fastest published static silicon divider operates up to 35 GHz. Silicon bipolar technologies offer high reliability and cost-effectiveness. This divider is fabricated in a 0.5 /spl mu/m double-polysilicon self-aligned Si/SiGe heterojunction bipolar technology.</abstract><pub>IEEE</pub><doi>10.1109/ISSCC.1997.585293</doi><tpages>2</tpages></addata></record> |
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identifier | ISSN: 0193-6530 |
ispartof | 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers, 1997, Vol.40, p.122-123 |
issn | 0193-6530 2376-8606 |
language | eng |
recordid | cdi_ieee_primary_585293 |
source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Energy consumption Frequency conversion Gain measurement Germanium silicon alloys III-V semiconductor materials Indium compounds Optical fibers Optical frequency conversion Silicon germanium Velocity measurement |
title | 42 GHz static frequency divider in a Si/SiGe bipolar technology |
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