42 GHz static frequency divider in a Si/SiGe bipolar technology

Frequency dividers are key components for multi-gigabit-per-second optical fiber links. For this application, maximum speed is mandatory, while the power consumption is not a limiting factor. To date, the highest operating speed for static frequency dividers has been achieved with III-V devices. For...

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Hauptverfasser: Wurzer, M., Meister, T.F., Schafer, I., Knapp, H., Bock, J., Stengl, R., Aufinger, K., Franosch, M., Rest, M., Moller, M., Rein, H.-M., Felder, A.
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creator Wurzer, M.
Meister, T.F.
Schafer, I.
Knapp, H.
Bock, J.
Stengl, R.
Aufinger, K.
Franosch, M.
Rest, M.
Moller, M.
Rein, H.-M.
Felder, A.
description Frequency dividers are key components for multi-gigabit-per-second optical fiber links. For this application, maximum speed is mandatory, while the power consumption is not a limiting factor. To date, the highest operating speed for static frequency dividers has been achieved with III-V devices. For AlInAs/GaInAs HBTs with 130 GHz f/sub T/, 39.5 GHz operation is measured, and for 0.1 /spl mu/m InAlAs/InGaAs HEMTs with f/sub T/ of approximately 200 GHz an operating speed of 40.4 GHz is recently reported. The fastest published static silicon divider operates up to 35 GHz. Silicon bipolar technologies offer high reliability and cost-effectiveness. This divider is fabricated in a 0.5 /spl mu/m double-polysilicon self-aligned Si/SiGe heterojunction bipolar technology.
doi_str_mv 10.1109/ISSCC.1997.585293
format Conference Proceeding
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Digest of Technical Papers</btitle><stitle>ISSCC</stitle><date>1997-01-01</date><risdate>1997</risdate><volume>40</volume><spage>122</spage><epage>123</epage><pages>122-123</pages><issn>0193-6530</issn><eissn>2376-8606</eissn><isbn>9780780337213</isbn><isbn>0780337212</isbn><abstract>Frequency dividers are key components for multi-gigabit-per-second optical fiber links. For this application, maximum speed is mandatory, while the power consumption is not a limiting factor. To date, the highest operating speed for static frequency dividers has been achieved with III-V devices. For AlInAs/GaInAs HBTs with 130 GHz f/sub T/, 39.5 GHz operation is measured, and for 0.1 /spl mu/m InAlAs/InGaAs HEMTs with f/sub T/ of approximately 200 GHz an operating speed of 40.4 GHz is recently reported. The fastest published static silicon divider operates up to 35 GHz. Silicon bipolar technologies offer high reliability and cost-effectiveness. 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identifier ISSN: 0193-6530
ispartof 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers, 1997, Vol.40, p.122-123
issn 0193-6530
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language eng
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Energy consumption
Frequency conversion
Gain measurement
Germanium silicon alloys
III-V semiconductor materials
Indium compounds
Optical fibers
Optical frequency conversion
Silicon germanium
Velocity measurement
title 42 GHz static frequency divider in a Si/SiGe bipolar technology
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