Key hot-carrier degradation model calibration and verification issues for accurate AC circuit-level reliability simulation

This study provides necessary degradation model calibration and evaluation guidelines required to enable more consistent and effective use of hot-carrier reliability simulation tools. Benchmark results provide strong verification that the AC degradation models are generally accurate if properly cali...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Wenjie Jiang, Huy Le, Dao, S., Kim, S.A., Stine, B., Chung, J.E., Yu-Jen Wu, Bendix, P., Prasad, S., Kapoor, A., Kopley, T.E., Dungan, T., Manna, I., Marcoux, P., Lifeng Wu, Chen, A., Zhihong Liu
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Acceleration Calibration Circuit simulation CMOS technology Degradation Hot carriers MOS devices Semiconductor device modeling SPICE Stress measurement
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