A physics-based model of the dielectric breakdown in HfO2 for statistical reliability prediction
We present a quantitative physical model describing the current evolution due to the formation of a conductive filament responsible for the HfO 2 dielectric breakdown. By linking the microscopic properties of the stress-generated electrical defects to the local power dissipation and to the correspon...
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| creator | Vandelli, L Padovani, A Larcher, L Bersuker, G Jung Yum Pavan, P |
| description | We present a quantitative physical model describing the current evolution due to the formation of a conductive filament responsible for the HfO 2 dielectric breakdown. By linking the microscopic properties of the stress-generated electrical defects to the local power dissipation and to the corresponding temperature increase along the conductive path the model reproduces the rapid current increase observed during the breakdown. The model successfully simulates the experimental time-dependent dielectric breakdown distributions measured in HfO 2 MIM capacitors under constant voltage stress, thus providing a statistical reliability prediction capability, which can be extended to other high-k materials, multilayer stacks, resistive memories based on transition metal oxides, etc. |
| doi_str_mv | 10.1109/IRPS.2011.5784582 |
| format | Conference Proceeding |
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By linking the microscopic properties of the stress-generated electrical defects to the local power dissipation and to the corresponding temperature increase along the conductive path the model reproduces the rapid current increase observed during the breakdown. The model successfully simulates the experimental time-dependent dielectric breakdown distributions measured in HfO 2 MIM capacitors under constant voltage stress, thus providing a statistical reliability prediction capability, which can be extended to other high-k materials, multilayer stacks, resistive memories based on transition metal oxides, etc.</description><identifier>ISSN: 1541-7026</identifier><identifier>ISBN: 1424491134</identifier><identifier>ISBN: 9781424491131</identifier><identifier>EISSN: 1938-1891</identifier><identifier>EISBN: 9781424491117</identifier><identifier>EISBN: 1424491118</identifier><identifier>EISBN: 1424491126</identifier><identifier>EISBN: 9781424491124</identifier><identifier>DOI: 10.1109/IRPS.2011.5784582</identifier><language>eng</language><publisher>IEEE</publisher><subject>breakdown statistics ; dielectric breakdown ; Dielectrics ; Electric breakdown ; Electron traps ; forming ; HfO 2 ; High K dielectric materials ; high-k ; Logic gates ; Power dissipation ; RRAM ; TDDB ; Tin</subject><ispartof>2011 International Reliability Physics Symposium, 2011, p.GD.5.1-GD.5.4</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5784582$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2056,27924,54919</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5784582$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Vandelli, L</creatorcontrib><creatorcontrib>Padovani, A</creatorcontrib><creatorcontrib>Larcher, L</creatorcontrib><creatorcontrib>Bersuker, G</creatorcontrib><creatorcontrib>Jung Yum</creatorcontrib><creatorcontrib>Pavan, P</creatorcontrib><title>A physics-based model of the dielectric breakdown in HfO2 for statistical reliability prediction</title><title>2011 International Reliability Physics Symposium</title><addtitle>IRPS</addtitle><description>We present a quantitative physical model describing the current evolution due to the formation of a conductive filament responsible for the HfO 2 dielectric breakdown. By linking the microscopic properties of the stress-generated electrical defects to the local power dissipation and to the corresponding temperature increase along the conductive path the model reproduces the rapid current increase observed during the breakdown. The model successfully simulates the experimental time-dependent dielectric breakdown distributions measured in HfO 2 MIM capacitors under constant voltage stress, thus providing a statistical reliability prediction capability, which can be extended to other high-k materials, multilayer stacks, resistive memories based on transition metal oxides, etc.</description><subject>breakdown statistics</subject><subject>dielectric breakdown</subject><subject>Dielectrics</subject><subject>Electric breakdown</subject><subject>Electron traps</subject><subject>forming</subject><subject>HfO 2</subject><subject>High K dielectric materials</subject><subject>high-k</subject><subject>Logic gates</subject><subject>Power dissipation</subject><subject>RRAM</subject><subject>TDDB</subject><subject>Tin</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>1424491134</isbn><isbn>9781424491131</isbn><isbn>9781424491117</isbn><isbn>1424491118</isbn><isbn>1424491126</isbn><isbn>9781424491124</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kMtKAzEUQOMLbGs_QNzkB6bem8ckWZaitlCoaPc1r6HRaWeYBKR_r2BdncWBsziE3CPMEME8rt5e32cMEGdSaSE1uyBTozQKJoRBRHVJRmi4rlAbvCLjf8HF9a-QAisFrL4l45w_ARhwXY_Ix5z2-1NOPlfO5hjooQuxpV1Dyz7SkGIbfRmSp26I9it030eajnTZbBhtuoHmYkvKJXnb0iG2ybrUpnKi_RBD8iV1xzty09g2x-mZE7J9ftoultV687JazNdVMlAqlA4tQg2Oc6EZqMCEN1FyqQyvjfOiro0CQKdC4AawRqYlA6uUt5ZzPiEPf9kUY9z1QzrY4bQ7j-I_flpXRQ</recordid><startdate>201104</startdate><enddate>201104</enddate><creator>Vandelli, L</creator><creator>Padovani, A</creator><creator>Larcher, L</creator><creator>Bersuker, G</creator><creator>Jung Yum</creator><creator>Pavan, P</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201104</creationdate><title>A physics-based model of the dielectric breakdown in HfO2 for statistical reliability prediction</title><author>Vandelli, L ; Padovani, A ; Larcher, L ; Bersuker, G ; Jung Yum ; Pavan, P</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-15b1a1060b3348207d24c9e53579369bc46697001b7dd39016128520a77caa333</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>breakdown statistics</topic><topic>dielectric breakdown</topic><topic>Dielectrics</topic><topic>Electric breakdown</topic><topic>Electron traps</topic><topic>forming</topic><topic>HfO 2</topic><topic>High K dielectric materials</topic><topic>high-k</topic><topic>Logic gates</topic><topic>Power dissipation</topic><topic>RRAM</topic><topic>TDDB</topic><topic>Tin</topic><toplevel>online_resources</toplevel><creatorcontrib>Vandelli, L</creatorcontrib><creatorcontrib>Padovani, A</creatorcontrib><creatorcontrib>Larcher, L</creatorcontrib><creatorcontrib>Bersuker, G</creatorcontrib><creatorcontrib>Jung Yum</creatorcontrib><creatorcontrib>Pavan, P</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Vandelli, L</au><au>Padovani, A</au><au>Larcher, L</au><au>Bersuker, G</au><au>Jung Yum</au><au>Pavan, P</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A physics-based model of the dielectric breakdown in HfO2 for statistical reliability prediction</atitle><btitle>2011 International Reliability Physics Symposium</btitle><stitle>IRPS</stitle><date>2011-04</date><risdate>2011</risdate><spage>GD.5.1</spage><epage>GD.5.4</epage><pages>GD.5.1-GD.5.4</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>1424491134</isbn><isbn>9781424491131</isbn><eisbn>9781424491117</eisbn><eisbn>1424491118</eisbn><eisbn>1424491126</eisbn><eisbn>9781424491124</eisbn><abstract>We present a quantitative physical model describing the current evolution due to the formation of a conductive filament responsible for the HfO 2 dielectric breakdown. By linking the microscopic properties of the stress-generated electrical defects to the local power dissipation and to the corresponding temperature increase along the conductive path the model reproduces the rapid current increase observed during the breakdown. The model successfully simulates the experimental time-dependent dielectric breakdown distributions measured in HfO 2 MIM capacitors under constant voltage stress, thus providing a statistical reliability prediction capability, which can be extended to other high-k materials, multilayer stacks, resistive memories based on transition metal oxides, etc.</abstract><pub>IEEE</pub><doi>10.1109/IRPS.2011.5784582</doi></addata></record> |
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| ispartof | 2011 International Reliability Physics Symposium, 2011, p.GD.5.1-GD.5.4 |
| issn | 1541-7026 1938-1891 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | breakdown statistics dielectric breakdown Dielectrics Electric breakdown Electron traps forming HfO 2 High K dielectric materials high-k Logic gates Power dissipation RRAM TDDB Tin |
| title | A physics-based model of the dielectric breakdown in HfO2 for statistical reliability prediction |
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