The effect of crystallinity of HfO2 on the resistive memory switching reliability
We measured direct physical evidence that can explain different switching behaviors for HfO 2 based ReRAM structure for the first time. The switching behavior depends on the degree of crystallinity of HfO 2 . We observed crystallized HfO 2 which is grown under higher temperature with High Resolution...
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| creator | Min Gyu Sung Wan Gee Kim Jong Hee Yoo Sook Joo Kim Jung Nam Kim Byung Gu Gyun Jun Young Byun Taeh Wan Kim Won Kim Moon Sig Joo Jae Sung Roh Sung Ki Park |
| description | We measured direct physical evidence that can explain different switching behaviors for HfO 2 based ReRAM structure for the first time. The switching behavior depends on the degree of crystallinity of HfO 2 . We observed crystallized HfO 2 which is grown under higher temperature with High Resolution Scanning Transmission Electron Microscopy (STEM) Electron Energy Loss Spectroscopy (EELS), which prevents creating enough oxygen vacancies to start electric switching under low forming voltage. However, non-stoichiometric structure region of HfO 2 which has amorphous phase provides enough oxygen vacancies which are the electrical paths. Therefore, non-stoichiometric structure of amorphous HfO 2 during fabricating process is crucial to obtain reliable switching characteristics. |
| doi_str_mv | 10.1109/IRPS.2011.5784551 |
| format | Conference Proceeding |
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The switching behavior depends on the degree of crystallinity of HfO 2 . We observed crystallized HfO 2 which is grown under higher temperature with High Resolution Scanning Transmission Electron Microscopy (STEM) Electron Energy Loss Spectroscopy (EELS), which prevents creating enough oxygen vacancies to start electric switching under low forming voltage. However, non-stoichiometric structure region of HfO 2 which has amorphous phase provides enough oxygen vacancies which are the electrical paths. Therefore, non-stoichiometric structure of amorphous HfO 2 during fabricating process is crucial to obtain reliable switching characteristics.</description><identifier>ISSN: 1541-7026</identifier><identifier>ISBN: 1424491134</identifier><identifier>ISBN: 9781424491131</identifier><identifier>EISSN: 1938-1891</identifier><identifier>EISBN: 9781424491117</identifier><identifier>EISBN: 1424491118</identifier><identifier>EISBN: 1424491126</identifier><identifier>EISBN: 9781424491124</identifier><identifier>DOI: 10.1109/IRPS.2011.5784551</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Atomic layer deposition ; Electrodes ; Nitrogen ; Switches ; Tin</subject><ispartof>2011 International Reliability Physics Symposium, 2011, p.6B.5.1-6B.5.5</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5784551$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5784551$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Min Gyu Sung</creatorcontrib><creatorcontrib>Wan Gee Kim</creatorcontrib><creatorcontrib>Jong Hee Yoo</creatorcontrib><creatorcontrib>Sook Joo Kim</creatorcontrib><creatorcontrib>Jung Nam Kim</creatorcontrib><creatorcontrib>Byung Gu Gyun</creatorcontrib><creatorcontrib>Jun Young Byun</creatorcontrib><creatorcontrib>Taeh Wan Kim</creatorcontrib><creatorcontrib>Won Kim</creatorcontrib><creatorcontrib>Moon Sig Joo</creatorcontrib><creatorcontrib>Jae Sung Roh</creatorcontrib><creatorcontrib>Sung Ki Park</creatorcontrib><title>The effect of crystallinity of HfO2 on the resistive memory switching reliability</title><title>2011 International Reliability Physics Symposium</title><addtitle>IRPS</addtitle><description>We measured direct physical evidence that can explain different switching behaviors for HfO 2 based ReRAM structure for the first time. The switching behavior depends on the degree of crystallinity of HfO 2 . We observed crystallized HfO 2 which is grown under higher temperature with High Resolution Scanning Transmission Electron Microscopy (STEM) Electron Energy Loss Spectroscopy (EELS), which prevents creating enough oxygen vacancies to start electric switching under low forming voltage. However, non-stoichiometric structure region of HfO 2 which has amorphous phase provides enough oxygen vacancies which are the electrical paths. Therefore, non-stoichiometric structure of amorphous HfO 2 during fabricating process is crucial to obtain reliable switching characteristics.</description><subject>Annealing</subject><subject>Atomic layer deposition</subject><subject>Electrodes</subject><subject>Nitrogen</subject><subject>Switches</subject><subject>Tin</subject><issn>1541-7026</issn><issn>1938-1891</issn><isbn>1424491134</isbn><isbn>9781424491131</isbn><isbn>9781424491117</isbn><isbn>1424491118</isbn><isbn>1424491126</isbn><isbn>9781424491124</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kFtLAzEUhOMNbGt_gPiSP7BrTm578ijF2kKhXvpe0mxiI9uubIKy_94V69PAfDOHwxByC6wEYOZ--fr8VnIGUKoKpVJwRqamQpBcSgMA1TkZgRFYABq4ION_IOTlAJSEomJcX5NxSh-McSZQj8jLZu-pD8G7TNtAXdenbJsmHmPuf41FWHPaHmkeYp1PMeX45enBH9qup-k7ZrePx_cBNdHuYjO0bshVsE3y05NOyGb-uJktitX6aTl7WBXRsFy4uuJoal4Lvqs4C9obtIoH5EJZwYXEnVbonEYBGEzAGhnWOgSLWg_fiwm5-zsbvffbzy4ebNdvT8uIHyQ4Uw0</recordid><startdate>201104</startdate><enddate>201104</enddate><creator>Min Gyu Sung</creator><creator>Wan Gee Kim</creator><creator>Jong Hee Yoo</creator><creator>Sook Joo Kim</creator><creator>Jung Nam Kim</creator><creator>Byung Gu Gyun</creator><creator>Jun Young Byun</creator><creator>Taeh Wan Kim</creator><creator>Won Kim</creator><creator>Moon Sig Joo</creator><creator>Jae Sung Roh</creator><creator>Sung Ki Park</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201104</creationdate><title>The effect of crystallinity of HfO2 on the resistive memory switching reliability</title><author>Min Gyu Sung ; Wan Gee Kim ; Jong Hee Yoo ; Sook Joo Kim ; Jung Nam Kim ; Byung Gu Gyun ; Jun Young Byun ; Taeh Wan Kim ; Won Kim ; Moon Sig Joo ; Jae Sung Roh ; Sung Ki Park</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-cd7289d2d32b720f6e98a52f8235a32348b658cc68318f9f8d808d6ffa8660023</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Annealing</topic><topic>Atomic layer deposition</topic><topic>Electrodes</topic><topic>Nitrogen</topic><topic>Switches</topic><topic>Tin</topic><toplevel>online_resources</toplevel><creatorcontrib>Min Gyu Sung</creatorcontrib><creatorcontrib>Wan Gee Kim</creatorcontrib><creatorcontrib>Jong Hee Yoo</creatorcontrib><creatorcontrib>Sook Joo Kim</creatorcontrib><creatorcontrib>Jung Nam Kim</creatorcontrib><creatorcontrib>Byung Gu Gyun</creatorcontrib><creatorcontrib>Jun Young Byun</creatorcontrib><creatorcontrib>Taeh Wan Kim</creatorcontrib><creatorcontrib>Won Kim</creatorcontrib><creatorcontrib>Moon Sig Joo</creatorcontrib><creatorcontrib>Jae Sung Roh</creatorcontrib><creatorcontrib>Sung Ki Park</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Min Gyu Sung</au><au>Wan Gee Kim</au><au>Jong Hee Yoo</au><au>Sook Joo Kim</au><au>Jung Nam Kim</au><au>Byung Gu Gyun</au><au>Jun Young Byun</au><au>Taeh Wan Kim</au><au>Won Kim</au><au>Moon Sig Joo</au><au>Jae Sung Roh</au><au>Sung Ki Park</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The effect of crystallinity of HfO2 on the resistive memory switching reliability</atitle><btitle>2011 International Reliability Physics Symposium</btitle><stitle>IRPS</stitle><date>2011-04</date><risdate>2011</risdate><spage>6B.5.1</spage><epage>6B.5.5</epage><pages>6B.5.1-6B.5.5</pages><issn>1541-7026</issn><eissn>1938-1891</eissn><isbn>1424491134</isbn><isbn>9781424491131</isbn><eisbn>9781424491117</eisbn><eisbn>1424491118</eisbn><eisbn>1424491126</eisbn><eisbn>9781424491124</eisbn><abstract>We measured direct physical evidence that can explain different switching behaviors for HfO 2 based ReRAM structure for the first time. The switching behavior depends on the degree of crystallinity of HfO 2 . We observed crystallized HfO 2 which is grown under higher temperature with High Resolution Scanning Transmission Electron Microscopy (STEM) Electron Energy Loss Spectroscopy (EELS), which prevents creating enough oxygen vacancies to start electric switching under low forming voltage. However, non-stoichiometric structure region of HfO 2 which has amorphous phase provides enough oxygen vacancies which are the electrical paths. Therefore, non-stoichiometric structure of amorphous HfO 2 during fabricating process is crucial to obtain reliable switching characteristics.</abstract><pub>IEEE</pub><doi>10.1109/IRPS.2011.5784551</doi></addata></record> |
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| identifier | ISSN: 1541-7026 |
| ispartof | 2011 International Reliability Physics Symposium, 2011, p.6B.5.1-6B.5.5 |
| issn | 1541-7026 1938-1891 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Atomic layer deposition Electrodes Nitrogen Switches Tin |
| title | The effect of crystallinity of HfO2 on the resistive memory switching reliability |
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