SiGe BJTs for low-voltage power applications

This paper describes the development of silicon germanium (SiGe) based transistors for low-voltage handset applications in the 0.9-2.4 GHz frequency range. The SiGe BJTs developed for this effort consisted of two types; the first were small-signal devices, the second were power devices with a modifi...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	O'Keefe, M.F., Henderson, G.N., Boles, T.E., Noonan, P., Sledziewski, J.M., Brown, B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Bipolar transistors Doping Frequency Gallium arsenide Germanium silicon alloys Heterojunction bipolar transistors Photonic band gap Power amplifiers Silicon germanium Telephone sets
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