A new IGBT module for megawatt class 380VAC to 690VAC grid tie inverters
This paper presents a new high power dual IGBT module package designed for megawatt class utility interface inverters operating in the 380VAC to 690VAC range. This new module utilizes the latest high efficiency power chips and features maximum current ratings of 2500A at 1200V or 1800A at 1700V. A n...
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creator | Motto, E R Donlon, J F |
description | This paper presents a new high power dual IGBT module package designed for megawatt class utility interface inverters operating in the 380VAC to 690VAC range. This new module utilizes the latest high efficiency power chips and features maximum current ratings of 2500A at 1200V or 1800A at 1700V. A new aluminum to aluminum nitride to aluminum direct bonded baseplate structure has been developed to increase reliability while reducing weight. The power chip layout has been optimized for efficient thermal management in both liquid and air cooled configurations. A novel four layer internal bus structure was developed to provide extremely low inductance for minimization of surge voltages. This paper will describe the design features, characteristics, and performance of this new module. |
doi_str_mv | 10.1109/APEC.2011.5744762 |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5744762</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5744762</ieee_id><sourcerecordid>5744762</sourcerecordid><originalsourceid>FETCH-LOGICAL-i175t-11f2c17b4f069d07eb8bae9fb3a60acb0dab45120d5597aa5afadda302a618733</originalsourceid><addsrcrecordid>eNpVkM1Kw0AURsc_MNY-gLiZF0i8d_6zjKG2hYIuqttyk5mUSNJIJlp8e0G7cfUdOHAWH2N3CBki5A_Fy6LMBCBm2ipljThj89w6VEIpB06Lc5YIZSE1RtmLf07pS5YgKJcKKdU1u4nxHUBIiyZhq4IfwpGvl49b3g_-swu8GUbehz0daZp43VGMXDp4K0o-Ddzkv7QfW8-nNvD28BXGKYzxll011MUwP-2MvT4ttuUq3Twv12WxSVu0ekoRG1GjrVQDJvdgQ-UqCnlTSTJAdQWeKqVRgNc6t0SaGvKeJAgy6KyUM3b_121DCLuPse1p_N6dTpE_EANO0w</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>A new IGBT module for megawatt class 380VAC to 690VAC grid tie inverters</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Motto, E R ; Donlon, J F</creator><creatorcontrib>Motto, E R ; Donlon, J F</creatorcontrib><description>This paper presents a new high power dual IGBT module package designed for megawatt class utility interface inverters operating in the 380VAC to 690VAC range. This new module utilizes the latest high efficiency power chips and features maximum current ratings of 2500A at 1200V or 1800A at 1700V. A new aluminum to aluminum nitride to aluminum direct bonded baseplate structure has been developed to increase reliability while reducing weight. The power chip layout has been optimized for efficient thermal management in both liquid and air cooled configurations. A novel four layer internal bus structure was developed to provide extremely low inductance for minimization of surge voltages. This paper will describe the design features, characteristics, and performance of this new module.</description><identifier>ISSN: 1048-2334</identifier><identifier>ISBN: 9781424480845</identifier><identifier>ISBN: 1424480841</identifier><identifier>EISSN: 2470-6647</identifier><identifier>EISBN: 9781424480852</identifier><identifier>EISBN: 9781424480838</identifier><identifier>EISBN: 1424480833</identifier><identifier>EISBN: 142448085X</identifier><identifier>DOI: 10.1109/APEC.2011.5744762</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum ; Inductance ; Insulated gate bipolar transistors ; Inverters ; Layout ; Logic gates ; Reliability ; Semiconductor module ; Utility interface inverter</subject><ispartof>2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2011, p.1306-1310</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5744762$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5744762$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Motto, E R</creatorcontrib><creatorcontrib>Donlon, J F</creatorcontrib><title>A new IGBT module for megawatt class 380VAC to 690VAC grid tie inverters</title><title>2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)</title><addtitle>APEC</addtitle><description>This paper presents a new high power dual IGBT module package designed for megawatt class utility interface inverters operating in the 380VAC to 690VAC range. This new module utilizes the latest high efficiency power chips and features maximum current ratings of 2500A at 1200V or 1800A at 1700V. A new aluminum to aluminum nitride to aluminum direct bonded baseplate structure has been developed to increase reliability while reducing weight. The power chip layout has been optimized for efficient thermal management in both liquid and air cooled configurations. A novel four layer internal bus structure was developed to provide extremely low inductance for minimization of surge voltages. This paper will describe the design features, characteristics, and performance of this new module.</description><subject>Aluminum</subject><subject>Inductance</subject><subject>Insulated gate bipolar transistors</subject><subject>Inverters</subject><subject>Layout</subject><subject>Logic gates</subject><subject>Reliability</subject><subject>Semiconductor module</subject><subject>Utility interface inverter</subject><issn>1048-2334</issn><issn>2470-6647</issn><isbn>9781424480845</isbn><isbn>1424480841</isbn><isbn>9781424480852</isbn><isbn>9781424480838</isbn><isbn>1424480833</isbn><isbn>142448085X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2011</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkM1Kw0AURsc_MNY-gLiZF0i8d_6zjKG2hYIuqttyk5mUSNJIJlp8e0G7cfUdOHAWH2N3CBki5A_Fy6LMBCBm2ipljThj89w6VEIpB06Lc5YIZSE1RtmLf07pS5YgKJcKKdU1u4nxHUBIiyZhq4IfwpGvl49b3g_-swu8GUbehz0daZp43VGMXDp4K0o-Ddzkv7QfW8-nNvD28BXGKYzxll011MUwP-2MvT4ttuUq3Twv12WxSVu0ekoRG1GjrVQDJvdgQ-UqCnlTSTJAdQWeKqVRgNc6t0SaGvKeJAgy6KyUM3b_121DCLuPse1p_N6dTpE_EANO0w</recordid><startdate>201103</startdate><enddate>201103</enddate><creator>Motto, E R</creator><creator>Donlon, J F</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201103</creationdate><title>A new IGBT module for megawatt class 380VAC to 690VAC grid tie inverters</title><author>Motto, E R ; Donlon, J F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-11f2c17b4f069d07eb8bae9fb3a60acb0dab45120d5597aa5afadda302a618733</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Aluminum</topic><topic>Inductance</topic><topic>Insulated gate bipolar transistors</topic><topic>Inverters</topic><topic>Layout</topic><topic>Logic gates</topic><topic>Reliability</topic><topic>Semiconductor module</topic><topic>Utility interface inverter</topic><toplevel>online_resources</toplevel><creatorcontrib>Motto, E R</creatorcontrib><creatorcontrib>Donlon, J F</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Motto, E R</au><au>Donlon, J F</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>A new IGBT module for megawatt class 380VAC to 690VAC grid tie inverters</atitle><btitle>2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)</btitle><stitle>APEC</stitle><date>2011-03</date><risdate>2011</risdate><spage>1306</spage><epage>1310</epage><pages>1306-1310</pages><issn>1048-2334</issn><eissn>2470-6647</eissn><isbn>9781424480845</isbn><isbn>1424480841</isbn><eisbn>9781424480852</eisbn><eisbn>9781424480838</eisbn><eisbn>1424480833</eisbn><eisbn>142448085X</eisbn><abstract>This paper presents a new high power dual IGBT module package designed for megawatt class utility interface inverters operating in the 380VAC to 690VAC range. This new module utilizes the latest high efficiency power chips and features maximum current ratings of 2500A at 1200V or 1800A at 1700V. A new aluminum to aluminum nitride to aluminum direct bonded baseplate structure has been developed to increase reliability while reducing weight. The power chip layout has been optimized for efficient thermal management in both liquid and air cooled configurations. A novel four layer internal bus structure was developed to provide extremely low inductance for minimization of surge voltages. This paper will describe the design features, characteristics, and performance of this new module.</abstract><pub>IEEE</pub><doi>10.1109/APEC.2011.5744762</doi><tpages>5</tpages></addata></record> |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | Aluminum Inductance Insulated gate bipolar transistors Inverters Layout Logic gates Reliability Semiconductor module Utility interface inverter |
title | A new IGBT module for megawatt class 380VAC to 690VAC grid tie inverters |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-22T23%3A00%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=A%20new%20IGBT%20module%20for%20megawatt%20class%20380VAC%20to%20690VAC%20grid%20tie%20inverters&rft.btitle=2011%20Twenty-Sixth%20Annual%20IEEE%20Applied%20Power%20Electronics%20Conference%20and%20Exposition%20(APEC)&rft.au=Motto,%20E%20R&rft.date=2011-03&rft.spage=1306&rft.epage=1310&rft.pages=1306-1310&rft.issn=1048-2334&rft.eissn=2470-6647&rft.isbn=9781424480845&rft.isbn_list=1424480841&rft_id=info:doi/10.1109/APEC.2011.5744762&rft_dat=%3Cieee_6IE%3E5744762%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424480852&rft.eisbn_list=9781424480838&rft.eisbn_list=1424480833&rft.eisbn_list=142448085X&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5744762&rfr_iscdi=true |