Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications

RECENT progress in wide bandgap power (WBG) switches shows great potential. Silicon carbide (SiC) is a promising material for power devices with breakdown voltages of several hundred volts up to 10 kV. SiC Schottky power diodes have achieved widespread commercial acceptance. Recently, much progress...

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Bibliographische Detailangaben

Hauptverfasser:	Glaser, J S, Nasadoski, J J, Losee, P A, Kashyap, A S, Matocha, K S, Garrett, J L, Stevanovic, L D
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Converters Insulated gate bipolar transistors Logic gates Loss measurement MOSFETs Silicon Silicon carbide
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