Effect of parasitic elements in a power converter on the switching performance of a MOSFET-snubber-diode configuration

This paper presents a detailed study on the switching process of a MOSFET-snubber-diode (MSD) configuration commonly used in power converters. An analytical model which takes critical parasitic elements and the interactions between gate drive circuit and power circuit into consideration is derived t...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Tin-ho Li, Jianjing Wang, Chung, H S-H
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance Equations Logic gates Mathematical model MOSFET MOSFET circuits parasitic element Snubbers Switches switching characteristics
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