Self-Aligned Carbon Nanotube Thin-Film Transistors on Flexible Substrates With Novel Source-Drain Contact and Multilayer Metal Interconnection
This paper presents the development and characterization of self-aligned carbon nanotube thin-film transistors (CNT-TFT) on flexible substrates. The channel consisting of dense, aligned, 99% pure semiconducting single-walled CNT is deposited using the dip-coat technique on a sacrificial substrate an...
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| Veröffentlicht in: | IEEE transactions on nanotechnology 2012-01, Vol.11 (1), p.44-50 |
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| creator | Pham, D. T. Subbaraman, H. Chen, M. Y. Xiaochuan Xu Chen, R. T. |
| description | This paper presents the development and characterization of self-aligned carbon nanotube thin-film transistors (CNT-TFT) on flexible substrates. The channel consisting of dense, aligned, 99% pure semiconducting single-walled CNT is deposited using the dip-coat technique on a sacrificial substrate and then transferred on the device substrate. The source, drain, and gate structures are formed by the ink-jet printing technique. A novel source-drain contact formation using wet droplet of silver ink prior to the CNT thin-film application has been developed to enhance source-drain contact with the CNT channel. Bending test data on CNT-TFT test structures show minimal change (less than 10%) in their performance. Moreover, a special multilayer metal interconnection technology is demonstrated for flexible electronics applications. Bending test data on via test structure show change in resistance by less than 5%. |
| doi_str_mv | 10.1109/TNANO.2011.2130535 |
| format | Article |
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T. ; Subbaraman, H. ; Chen, M. Y. ; Xiaochuan Xu ; Chen, R. T.</creator><creatorcontrib>Pham, D. T. ; Subbaraman, H. ; Chen, M. Y. ; Xiaochuan Xu ; Chen, R. T.</creatorcontrib><description>This paper presents the development and characterization of self-aligned carbon nanotube thin-film transistors (CNT-TFT) on flexible substrates. The channel consisting of dense, aligned, 99% pure semiconducting single-walled CNT is deposited using the dip-coat technique on a sacrificial substrate and then transferred on the device substrate. The source, drain, and gate structures are formed by the ink-jet printing technique. A novel source-drain contact formation using wet droplet of silver ink prior to the CNT thin-film application has been developed to enhance source-drain contact with the CNT channel. Bending test data on CNT-TFT test structures show minimal change (less than 10%) in their performance. 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Solid state devices ; Silver ; single-walled carbon nanotube (SWCNT) ; Substrates ; Testing, measurement, noise and reliability ; Thin films ; thin-film transistor (TFT) ; Transistors</subject><ispartof>IEEE transactions on nanotechnology, 2012-01, Vol.11 (1), p.44-50</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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T.</creatorcontrib><creatorcontrib>Subbaraman, H.</creatorcontrib><creatorcontrib>Chen, M. Y.</creatorcontrib><creatorcontrib>Xiaochuan Xu</creatorcontrib><creatorcontrib>Chen, R. T.</creatorcontrib><title>Self-Aligned Carbon Nanotube Thin-Film Transistors on Flexible Substrates With Novel Source-Drain Contact and Multilayer Metal Interconnection</title><title>IEEE transactions on nanotechnology</title><addtitle>TNANO</addtitle><description>This paper presents the development and characterization of self-aligned carbon nanotube thin-film transistors (CNT-TFT) on flexible substrates. The channel consisting of dense, aligned, 99% pure semiconducting single-walled CNT is deposited using the dip-coat technique on a sacrificial substrate and then transferred on the device substrate. The source, drain, and gate structures are formed by the ink-jet printing technique. A novel source-drain contact formation using wet droplet of silver ink prior to the CNT thin-film application has been developed to enhance source-drain contact with the CNT channel. Bending test data on CNT-TFT test structures show minimal change (less than 10%) in their performance. Moreover, a special multilayer metal interconnection technology is demonstrated for flexible electronics applications. Bending test data on via test structure show change in resistance by less than 5%.</description><subject>Applied sciences</subject><subject>Bend tests</subject><subject>Carbon nanotube (CNT)</subject><subject>Carbon nanotubes</subject><subject>Channels</subject><subject>Contact</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>dip-coat technique</subject><subject>Droplets</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>flexible electronics</subject><subject>Ink</subject><subject>Integrated circuit interconnections</subject><subject>Integrated circuits</subject><subject>Interconnection</subject><subject>Logic gates</subject><subject>Molecular electronics, nanoelectronics</subject><subject>Multilayers</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silver</subject><subject>single-walled carbon nanotube (SWCNT)</subject><subject>Substrates</subject><subject>Testing, measurement, noise and reliability</subject><subject>Thin films</subject><subject>thin-film transistor (TFT)</subject><subject>Transistors</subject><issn>1536-125X</issn><issn>1941-0085</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkcFuEzEQhlcIJErhBeBiISFx2eBZ22vvMQoEKrXpIUFwW3m9s9SVYxfbi-hL8Mw4TdRDTzOj-ebXzPxV9RboAoB2n3ab5eZ60VCARQOMCiaeVWfQcagpVeJ5yQVra2jEz5fVq5RuKQXZCnVW_duim-qls788jmSl4xA82Wgf8jwg2d1YX6-t25Nd1D7ZlENMpBBrh3_t4JBs5yHlqDMm8sPmG7IJf9CRbZijwfpz1NaTVfBZm0y0H8nV7LJ1-h4jucKsHbnwGaMJ3qPJNvjX1YtJu4RvTvG8-r7-slt9qy-vv16slpe1YULmWurOiIkNrRkbMKAMTE3TARsbzYFyVAPl1KgWRKelVKXseIcjtnKSlMmJnVcfj7p3MfyeMeV-b5NB57THMKceKFClhOJQ0PdP0NtynS_b9R1wKdpW8AI1R8jEkFLEqb-Ldq_jfVHqDw71Dw71B4f6k0Nl6MNJWSej3VRebGx6nGwElwU8iL87chYRH9tCMsW4Yv8B4tGasQ</recordid><startdate>201201</startdate><enddate>201201</enddate><creator>Pham, D. 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The source, drain, and gate structures are formed by the ink-jet printing technique. A novel source-drain contact formation using wet droplet of silver ink prior to the CNT thin-film application has been developed to enhance source-drain contact with the CNT channel. Bending test data on CNT-TFT test structures show minimal change (less than 10%) in their performance. Moreover, a special multilayer metal interconnection technology is demonstrated for flexible electronics applications. Bending test data on via test structure show change in resistance by less than 5%.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TNANO.2011.2130535</doi><tpages>7</tpages></addata></record> |
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| subjects | Applied sciences Bend tests Carbon nanotube (CNT) Carbon nanotubes Channels Contact Design. Technologies. Operation analysis. Testing dip-coat technique Droplets Electronics Exact sciences and technology flexible electronics Ink Integrated circuit interconnections Integrated circuits Interconnection Logic gates Molecular electronics, nanoelectronics Multilayers Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silver single-walled carbon nanotube (SWCNT) Substrates Testing, measurement, noise and reliability Thin films thin-film transistor (TFT) Transistors |
| title | Self-Aligned Carbon Nanotube Thin-Film Transistors on Flexible Substrates With Novel Source-Drain Contact and Multilayer Metal Interconnection |
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