Circuit models and applications of the superconducting field-effect transistor
Static and dynamic models for the superconducting transistor are developed. The models capture the symmetry of the source-drain structure, incorporate the gate reaction, span the long- and short-channel regimes without discontinuity, and are suitable for circuit simulation. The sensitivity of the dr...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 1989-10, Vol.24 (5), p.1441-1450 |
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| container_end_page | 1450 |
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| container_issue | 5 |
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| container_title | IEEE journal of solid-state circuits |
| container_volume | 24 |
| creator | Glasser, L.A. |
| description | Static and dynamic models for the superconducting transistor are developed. The models capture the symmetry of the source-drain structure, incorporate the gate reaction, span the long- and short-channel regimes without discontinuity, and are suitable for circuit simulation. The sensitivity of the drain-to-source critical current to changes in gate charge is shown to control much of the device dynamics. The model is used to investigate several circuit configurations including amplifiers, inverters, latches, flux transfer devices, and phase-locked components.< > |
| doi_str_mv | 10.1109/JSSC.1989.572631 |
| format | Article |
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The models capture the symmetry of the source-drain structure, incorporate the gate reaction, span the long- and short-channel regimes without discontinuity, and are suitable for circuit simulation. The sensitivity of the drain-to-source critical current to changes in gate charge is shown to control much of the device dynamics. The model is used to investigate several circuit configurations including amplifiers, inverters, latches, flux transfer devices, and phase-locked components.< ></description><subject>426001 - Engineering- Superconducting Devices & Circuits- (1990-)</subject><subject>990200 - Mathematics & Computers</subject><subject>Applied sciences</subject><subject>Circuit simulation</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>CRITICAL CURRENT</subject><subject>Cryogenics</subject><subject>CURRENTS</subject><subject>DYNAMICS</subject><subject>ELECTRIC CURRENTS</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>FETs</subject><subject>FIELD EFFECT TRANSISTORS</subject><subject>GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE</subject><subject>High temperature superconductors</subject><subject>MECHANICS</subject><subject>Metallization</subject><subject>MOSFET circuits</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SIMULATION</subject><subject>SUPERCONDUCTING DEVICES</subject><subject>Superconducting materials</subject><subject>Threshold voltage</subject><subject>TRANSISTORS</subject><subject>Wave functions</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1989</creationdate><recordtype>article</recordtype><recordid>eNqNkc1r3DAQxUVpods099CTCaU3b_VlWTqGJW0TQntIA70JrTRuFLyWo5EP_e-jxUvOPQ3D_N7jMY-QC0a3jFHz9fb-frdlRptt13Ml2BuyYV2nW9aLP2_JhlKmW8MpfU8-ID7VVUrNNuTnLma_xNIcUoARGzeFxs3zGL0rMU3YpKEpj9DgMkP2aQqLL3H62wwRxtDCMIAvTcluwogl5Y_k3eBGhPPTPCMP365_7360d7--3-yu7lovel3afeeconvuQDMWlJBOKyel0RAgqGCEU3twA4DnQbFOKmqYDNLte661p704I5erb8ISLfpYwD_WeFONY5WpWMcr9GWF5pyeF8BiDxE9jKObIC1oq1cnFO__A-RCGCkrSFfQ54SYYbBzjgeX_1lG7bEGe6zBHmuwaw1V8vnk7dC7caiv8hFfdcp0nApRsU8rFgHg9XryeAFkT5Do</recordid><startdate>19891001</startdate><enddate>19891001</enddate><creator>Glasser, L.A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>OTOTI</scope></search><sort><creationdate>19891001</creationdate><title>Circuit models and applications of the superconducting field-effect transistor</title><author>Glasser, L.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c378t-b5aa60b2ae811d634a86a4498eded6d93a6beafeec2d615460914d4ab7288c073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>426001 - Engineering- Superconducting Devices & Circuits- (1990-)</topic><topic>990200 - Mathematics & Computers</topic><topic>Applied sciences</topic><topic>Circuit simulation</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>CRITICAL CURRENT</topic><topic>Cryogenics</topic><topic>CURRENTS</topic><topic>DYNAMICS</topic><topic>ELECTRIC CURRENTS</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>FETs</topic><topic>FIELD EFFECT TRANSISTORS</topic><topic>GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE</topic><topic>High temperature superconductors</topic><topic>MECHANICS</topic><topic>Metallization</topic><topic>MOSFET circuits</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SIMULATION</topic><topic>SUPERCONDUCTING DEVICES</topic><topic>Superconducting materials</topic><topic>Threshold voltage</topic><topic>TRANSISTORS</topic><topic>Wave functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Glasser, L.A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>OSTI.GOV</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Glasser, L.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Circuit models and applications of the superconducting field-effect transistor</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1989-10-01</date><risdate>1989</risdate><volume>24</volume><issue>5</issue><spage>1441</spage><epage>1450</epage><pages>1441-1450</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>Static and dynamic models for the superconducting transistor are developed. The models capture the symmetry of the source-drain structure, incorporate the gate reaction, span the long- and short-channel regimes without discontinuity, and are suitable for circuit simulation. The sensitivity of the drain-to-source critical current to changes in gate charge is shown to control much of the device dynamics. The model is used to investigate several circuit configurations including amplifiers, inverters, latches, flux transfer devices, and phase-locked components.< ></abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.1989.572631</doi><tpages>10</tpages></addata></record> |
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| identifier | ISSN: 0018-9200 |
| ispartof | IEEE journal of solid-state circuits, 1989-10, Vol.24 (5), p.1441-1450 |
| issn | 0018-9200 1558-173X |
| language | eng |
| recordid | cdi_ieee_primary_572631 |
| source | IEEE Electronic Library (IEL) |
| subjects | 426001 - Engineering- Superconducting Devices & Circuits- (1990-) 990200 - Mathematics & Computers Applied sciences Circuit simulation CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CRITICAL CURRENT Cryogenics CURRENTS DYNAMICS ELECTRIC CURRENTS Electronics Exact sciences and technology FETs FIELD EFFECT TRANSISTORS GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE High temperature superconductors MECHANICS Metallization MOSFET circuits SEMICONDUCTOR DEVICES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SIMULATION SUPERCONDUCTING DEVICES Superconducting materials Threshold voltage TRANSISTORS Wave functions |
| title | Circuit models and applications of the superconducting field-effect transistor |
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