Schottky barrier single electron and single hole transistors

Schottky barrier single electron/hole transistor (SB-SET/SB-SHT) are manufactured using erbium-silicide and platinum-silicide as source and drain materials. In room temperature, the manufactured SB-SET and SB-SHT showed typical FET behavior with high drive current, 550 and -376 μA/μm, respectively....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Moongyu Jang, Myungsim Jun, Taehyoung Zyung, Youngsam Park, Younghoon Hyun
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	FETs Logic gates Schottky barriers Schottky diodes Silicon Temperature
Online-Zugang:	Volltext bestellen
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