A fully integrated Q-band bidirectional transceiver in 0.12-µm SiGe BiCMOS technology

A fully integrated Q-band (40~45 GHz) bidirectional transceiver is demonstrated in a 0.12-μm SiGe BiCMOS technology. The RF front-end design eliminates the need for transmit/receive switches by demonstrating a novel PA/LNA circuit. The transceiver has a transmit conversion gain of 35 dB with a 3-dB...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Joohwa Kim, Buckwalter, J F
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BiCMOS integrated circuits Gain Impedance matching Loss measurement Noise Radio frequency Transceivers
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