AlGaN/GaN HEMT TCAD simulation and model extraction for RF applications
GaN devices have significant advantages in power density, thermal characteristics, and voltage range over those based on conventional compound semiconductors or Silicon. With GaN, as in other materials systems there are significant advantages in cycle time and strength of design from use of TCAD. He...
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| creator | Hartin, O Green, B |
| description | GaN devices have significant advantages in power density, thermal characteristics, and voltage range over those based on conventional compound semiconductors or Silicon. With GaN, as in other materials systems there are significant advantages in cycle time and strength of design from use of TCAD. Here TCAD simulations of AlGaN/GaN HEMTs are shown to accurately match measured DC and small signal AC data. For large signal RF applications it is necessary to use modeling to extend the application of this TCAD solution. Proprietary models are extracted from TCAD data and demonstrated. |
| doi_str_mv | 10.1109/BIPOL.2010.5667949 |
| format | Conference Proceeding |
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Proprietary models are extracted from TCAD data and demonstrated.</description><subject>AlGaN/GaN HEMT</subject><subject>Aluminum gallium nitride</subject><subject>compound semiconductor modeling and simulation</subject><subject>Data models</subject><subject>device physics</subject><subject>Gallium nitride</subject><subject>Integrated circuit modeling</subject><subject>Load modeling</subject><subject>Logic gates</subject><subject>power devices</subject><subject>Radio frequency</subject><subject>RF circuits</subject><subject>RF devices</subject><subject>RF models</subject><issn>1088-9299</issn><issn>2378-590X</issn><isbn>1424485789</isbn><isbn>9781424485789</isbn><isbn>1424485770</isbn><isbn>9781424485772</isbn><isbn>9781424485796</isbn><isbn>1424485797</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpFUMtKw0AUHV9gWv0B3cwPpL1zM8nMLGNt00K0IhHclXFyByJJE5II-veWWnBxOJwHZ3EYuxMwEwLM_GHzss1nCAcdJ4ky0pyxiZAopY6VgnMWYKR0GBt4v_gPtLlkgQCtQ4PGXLPJMHwCIKDSAcvSOrPP8wP4evlU8GKRPvKhar5qO1btntt9yZu2pJrT99hbdzR92_PXFbddV1fu2Btu2JW39UC3J56yt9WyWKzDfJttFmkeOkQ5ht6TA6uViUlaJJImEdbFXqIFAyS8dKUS7gNIUoJJ4lGQL0lHkUMX2zKasvu_3YqIdl1fNbb_2Z3eiH4BpfFPWw</recordid><startdate>201010</startdate><enddate>201010</enddate><creator>Hartin, O</creator><creator>Green, B</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>201010</creationdate><title>AlGaN/GaN HEMT TCAD simulation and model extraction for RF applications</title><author>Hartin, O ; Green, B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c224t-ffec0a8795e4a2ee4961ac5f42a090e1f4cd71cb0e4e6266f21efde833c2c5ad3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>AlGaN/GaN HEMT</topic><topic>Aluminum gallium nitride</topic><topic>compound semiconductor modeling and simulation</topic><topic>Data models</topic><topic>device physics</topic><topic>Gallium nitride</topic><topic>Integrated circuit modeling</topic><topic>Load modeling</topic><topic>Logic gates</topic><topic>power devices</topic><topic>Radio frequency</topic><topic>RF circuits</topic><topic>RF devices</topic><topic>RF models</topic><toplevel>online_resources</toplevel><creatorcontrib>Hartin, O</creatorcontrib><creatorcontrib>Green, B</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hartin, O</au><au>Green, B</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>AlGaN/GaN HEMT TCAD simulation and model extraction for RF applications</atitle><btitle>2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)</btitle><stitle>BIPOL</stitle><date>2010-10</date><risdate>2010</risdate><spage>232</spage><epage>236</epage><pages>232-236</pages><issn>1088-9299</issn><eissn>2378-590X</eissn><isbn>1424485789</isbn><isbn>9781424485789</isbn><eisbn>1424485770</eisbn><eisbn>9781424485772</eisbn><eisbn>9781424485796</eisbn><eisbn>1424485797</eisbn><abstract>GaN devices have significant advantages in power density, thermal characteristics, and voltage range over those based on conventional compound semiconductors or Silicon. With GaN, as in other materials systems there are significant advantages in cycle time and strength of design from use of TCAD. Here TCAD simulations of AlGaN/GaN HEMTs are shown to accurately match measured DC and small signal AC data. For large signal RF applications it is necessary to use modeling to extend the application of this TCAD solution. Proprietary models are extracted from TCAD data and demonstrated.</abstract><pub>IEEE</pub><doi>10.1109/BIPOL.2010.5667949</doi><tpages>5</tpages></addata></record> |
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| ispartof | 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010, p.232-236 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | AlGaN/GaN HEMT Aluminum gallium nitride compound semiconductor modeling and simulation Data models device physics Gallium nitride Integrated circuit modeling Load modeling Logic gates power devices Radio frequency RF circuits RF devices RF models |
| title | AlGaN/GaN HEMT TCAD simulation and model extraction for RF applications |
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