The accelerated TID degradation induced by neutron irradiation on CMOS microprocessor

This paper presents an experimental study of total ionizing dose (TID) characterization of a CMOS microprocessor, which has been pre-exposed to different level of neutron fluence. The power supply current and output voltage of the IO port and pulse width modulation (PWM) are found to be sensitive in...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Xiao-Ming Jin, Ru-Yu Fan, Wei Chen, Yan Liu, Dong-Sheng Lin, Shan-Chao Yang
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Degradation Gamma rays Microprocessors MOSFET circuits Neutrons Pulse width modulation Radiation effects
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