On the identification of trap location in AlGaN/GaN HEMTs during electrical stress
Location and properties of traps generated in AlGaN/GaN high electron mobility transistors submitted to electrical stress was studied using an integrated electrical and optical methodology. A spatial and spectral electroluminescence study reveals traps generated during both OFF- and ON-state stress...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 122 |
|---|---|
| container_issue | |
| container_start_page | 119 |
| container_title | |
| container_volume | |
| creator | Ťapajna, M Simms, R J T Pei, Y Mishra, U K Kuball, M |
| description | Location and properties of traps generated in AlGaN/GaN high electron mobility transistors submitted to electrical stress was studied using an integrated electrical and optical methodology. A spatial and spectral electroluminescence study reveals traps generated during both OFF- and ON-state stress to be located in the gate and access region close to the drain side of the gate edge, while UV-light assisted detrapping analysis in conjunction with photoluminescence illustrate these dominant traps located mostly within an AlGaN subsurface layer. |
| doi_str_mv | 10.1109/ASDAM.2010.5666318 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_5666318</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5666318</ieee_id><sourcerecordid>5666318</sourcerecordid><originalsourceid>FETCH-LOGICAL-i90t-95a6e957707bf5483b269598221537e6816e0e66a126b964538e686535e9c8a63</originalsourceid><addsrcrecordid>eNpVkN1KAzEQhSMiKHVfQG_yAtvmd5JcLrW2QmtB975kt7MaWbcliRe-vQvdGw8Mh_PBDMMh5IGzOefMLar3p2o3F2zMGgAkt1ekcMZyJZSy2kh1_S8rfkuKlL7YKC2M0-6OvO0Hmj-RhiMOOXSh9TmcBnrqaI7-TPvTBMJAq37tXxfj0M1qVyd6_Ilh-KDYY5vjuNjTlCOmdE9uOt8nLCafkfp5VS835Xa_fllW2zI4lkunPaDTxjDTdFpZ2QgYP7JCcC0NguWADAE8F9A4UFraEYKWGl1rPcgZebycDYh4OMfw7ePvYSpC_gG7u08I</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>On the identification of trap location in AlGaN/GaN HEMTs during electrical stress</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Ťapajna, M ; Simms, R J T ; Pei, Y ; Mishra, U K ; Kuball, M</creator><creatorcontrib>Ťapajna, M ; Simms, R J T ; Pei, Y ; Mishra, U K ; Kuball, M</creatorcontrib><description>Location and properties of traps generated in AlGaN/GaN high electron mobility transistors submitted to electrical stress was studied using an integrated electrical and optical methodology. A spatial and spectral electroluminescence study reveals traps generated during both OFF- and ON-state stress to be located in the gate and access region close to the drain side of the gate edge, while UV-light assisted detrapping analysis in conjunction with photoluminescence illustrate these dominant traps located mostly within an AlGaN subsurface layer.</description><identifier>ISBN: 9781424485741</identifier><identifier>ISBN: 1424485746</identifier><identifier>EISBN: 9781424485734</identifier><identifier>EISBN: 9781424485758</identifier><identifier>EISBN: 1424485754</identifier><identifier>EISBN: 1424485738</identifier><identifier>DOI: 10.1109/ASDAM.2010.5666318</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum gallium nitride ; Electron traps ; Gallium nitride ; HEMTs ; Logic gates ; MODFETs ; Stress</subject><ispartof>The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, 2010, p.119-122</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5666318$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5666318$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Ťapajna, M</creatorcontrib><creatorcontrib>Simms, R J T</creatorcontrib><creatorcontrib>Pei, Y</creatorcontrib><creatorcontrib>Mishra, U K</creatorcontrib><creatorcontrib>Kuball, M</creatorcontrib><title>On the identification of trap location in AlGaN/GaN HEMTs during electrical stress</title><title>The Eighth International Conference on Advanced Semiconductor Devices and Microsystems</title><addtitle>ASDAM</addtitle><description>Location and properties of traps generated in AlGaN/GaN high electron mobility transistors submitted to electrical stress was studied using an integrated electrical and optical methodology. A spatial and spectral electroluminescence study reveals traps generated during both OFF- and ON-state stress to be located in the gate and access region close to the drain side of the gate edge, while UV-light assisted detrapping analysis in conjunction with photoluminescence illustrate these dominant traps located mostly within an AlGaN subsurface layer.</description><subject>Aluminum gallium nitride</subject><subject>Electron traps</subject><subject>Gallium nitride</subject><subject>HEMTs</subject><subject>Logic gates</subject><subject>MODFETs</subject><subject>Stress</subject><isbn>9781424485741</isbn><isbn>1424485746</isbn><isbn>9781424485734</isbn><isbn>9781424485758</isbn><isbn>1424485754</isbn><isbn>1424485738</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNpVkN1KAzEQhSMiKHVfQG_yAtvmd5JcLrW2QmtB975kt7MaWbcliRe-vQvdGw8Mh_PBDMMh5IGzOefMLar3p2o3F2zMGgAkt1ekcMZyJZSy2kh1_S8rfkuKlL7YKC2M0-6OvO0Hmj-RhiMOOXSh9TmcBnrqaI7-TPvTBMJAq37tXxfj0M1qVyd6_Ilh-KDYY5vjuNjTlCOmdE9uOt8nLCafkfp5VS835Xa_fllW2zI4lkunPaDTxjDTdFpZ2QgYP7JCcC0NguWADAE8F9A4UFraEYKWGl1rPcgZebycDYh4OMfw7ePvYSpC_gG7u08I</recordid><startdate>201010</startdate><enddate>201010</enddate><creator>Ťapajna, M</creator><creator>Simms, R J T</creator><creator>Pei, Y</creator><creator>Mishra, U K</creator><creator>Kuball, M</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201010</creationdate><title>On the identification of trap location in AlGaN/GaN HEMTs during electrical stress</title><author>Ťapajna, M ; Simms, R J T ; Pei, Y ; Mishra, U K ; Kuball, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-95a6e957707bf5483b269598221537e6816e0e66a126b964538e686535e9c8a63</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Aluminum gallium nitride</topic><topic>Electron traps</topic><topic>Gallium nitride</topic><topic>HEMTs</topic><topic>Logic gates</topic><topic>MODFETs</topic><topic>Stress</topic><toplevel>online_resources</toplevel><creatorcontrib>Ťapajna, M</creatorcontrib><creatorcontrib>Simms, R J T</creatorcontrib><creatorcontrib>Pei, Y</creatorcontrib><creatorcontrib>Mishra, U K</creatorcontrib><creatorcontrib>Kuball, M</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ťapajna, M</au><au>Simms, R J T</au><au>Pei, Y</au><au>Mishra, U K</au><au>Kuball, M</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>On the identification of trap location in AlGaN/GaN HEMTs during electrical stress</atitle><btitle>The Eighth International Conference on Advanced Semiconductor Devices and Microsystems</btitle><stitle>ASDAM</stitle><date>2010-10</date><risdate>2010</risdate><spage>119</spage><epage>122</epage><pages>119-122</pages><isbn>9781424485741</isbn><isbn>1424485746</isbn><eisbn>9781424485734</eisbn><eisbn>9781424485758</eisbn><eisbn>1424485754</eisbn><eisbn>1424485738</eisbn><abstract>Location and properties of traps generated in AlGaN/GaN high electron mobility transistors submitted to electrical stress was studied using an integrated electrical and optical methodology. A spatial and spectral electroluminescence study reveals traps generated during both OFF- and ON-state stress to be located in the gate and access region close to the drain side of the gate edge, while UV-light assisted detrapping analysis in conjunction with photoluminescence illustrate these dominant traps located mostly within an AlGaN subsurface layer.</abstract><pub>IEEE</pub><doi>10.1109/ASDAM.2010.5666318</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 9781424485741 |
| ispartof | The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, 2010, p.119-122 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_5666318 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Aluminum gallium nitride Electron traps Gallium nitride HEMTs Logic gates MODFETs Stress |
| title | On the identification of trap location in AlGaN/GaN HEMTs during electrical stress |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T09%3A45%3A34IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=On%20the%20identification%20of%20trap%20location%20in%20AlGaN/GaN%20HEMTs%20during%20electrical%20stress&rft.btitle=The%20Eighth%20International%20Conference%20on%20Advanced%20Semiconductor%20Devices%20and%20Microsystems&rft.au=T%CC%8Capajna,%20M&rft.date=2010-10&rft.spage=119&rft.epage=122&rft.pages=119-122&rft.isbn=9781424485741&rft.isbn_list=1424485746&rft_id=info:doi/10.1109/ASDAM.2010.5666318&rft_dat=%3Cieee_6IE%3E5666318%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&rft.eisbn=9781424485734&rft.eisbn_list=9781424485758&rft.eisbn_list=1424485754&rft.eisbn_list=1424485738&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=5666318&rfr_iscdi=true |