High voltage GaAs rectifiers for high frequency, high power density switching applications

The development and reliability studies of high voltage, high efficiency GaAs Merged p-n/Schottky (MPS) rectifiers are reported. These devices exhibit extremely low switching losses, along with DC breakdown voltage of 500-1000 V, and average rectified forward current of 8-10 A, at on-state voltage o...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Hadizad, P., Ommen, J., Salih, A., Varadarajan, S., Slocumb, R., Robles, E., Wolk, M., Thero, C.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Avalanche breakdown Breakdown voltage Design optimization Frequency Gallium arsenide Medical simulation Rectifiers Switching loss Switching systems US Department of Energy
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