A 1-GHz bipolar class-AB operational amplifier with multipath nested Miller compensation for 76-dB gain
A 1-GHz operational amplifier with a gain of 76 dB while driving a 50-/spl Omega/ load is presented. The equivalent input noise voltage is as low as 1.2 nV//spl radic/Hz. This combination of extremely high bandwidth, high gain, and low noise is the result of a three-stage all-n-p-n topology combined...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 1997-04, Vol.32 (4), p.488-498 |
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| container_end_page | 498 |
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| container_issue | 4 |
| container_start_page | 488 |
| container_title | IEEE journal of solid-state circuits |
| container_volume | 32 |
| creator | de Langen, K.-J. Eschauzier, R.G.H. van Dijk, G.J.A. Huijsing, J.H. |
| description | A 1-GHz operational amplifier with a gain of 76 dB while driving a 50-/spl Omega/ load is presented. The equivalent input noise voltage is as low as 1.2 nV//spl radic/Hz. This combination of extremely high bandwidth, high gain, and low noise is the result of a three-stage all-n-p-n topology combined with a multipath nested Miller compensation. Using 10-GHz f/sub T/ n-p-n transistors, the realizable bandwidth could be of the order of 2-3 GHz. However, bond-wire inductances restrict the useful bandwidth to 1 GHz. The amplifier occupies an active area of 0.26 mm/sup 2/ and has been realized in the bipolar part of a 1-/spl mu/m BiCMOS process. |
| doi_str_mv | 10.1109/4.563670 |
| format | Article |
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The equivalent input noise voltage is as low as 1.2 nV//spl radic/Hz. This combination of extremely high bandwidth, high gain, and low noise is the result of a three-stage all-n-p-n topology combined with a multipath nested Miller compensation. Using 10-GHz f/sub T/ n-p-n transistors, the realizable bandwidth could be of the order of 2-3 GHz. However, bond-wire inductances restrict the useful bandwidth to 1 GHz. The amplifier occupies an active area of 0.26 mm/sup 2/ and has been realized in the bipolar part of a 1-/spl mu/m BiCMOS process.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/4.563670</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>IEEE</publisher><subject>Analog integrated circuits ; Bandwidth ; BiCMOS integrated circuits ; Bonding ; Broadband amplifiers ; Circuit topology ; Frequency ; Gain ; Low voltage ; Operational amplifiers</subject><ispartof>IEEE journal of solid-state circuits, 1997-04, Vol.32 (4), p.488-498</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-f3ed6f6ddbcccf81eabb540d7c856347c821113ef072edab74d066318e7ef11d3</citedby><cites>FETCH-LOGICAL-c340t-f3ed6f6ddbcccf81eabb540d7c856347c821113ef072edab74d066318e7ef11d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/563670$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/563670$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>de Langen, K.-J.</creatorcontrib><creatorcontrib>Eschauzier, R.G.H.</creatorcontrib><creatorcontrib>van Dijk, G.J.A.</creatorcontrib><creatorcontrib>Huijsing, J.H.</creatorcontrib><title>A 1-GHz bipolar class-AB operational amplifier with multipath nested Miller compensation for 76-dB gain</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>A 1-GHz operational amplifier with a gain of 76 dB while driving a 50-/spl Omega/ load is presented. The equivalent input noise voltage is as low as 1.2 nV//spl radic/Hz. This combination of extremely high bandwidth, high gain, and low noise is the result of a three-stage all-n-p-n topology combined with a multipath nested Miller compensation. Using 10-GHz f/sub T/ n-p-n transistors, the realizable bandwidth could be of the order of 2-3 GHz. However, bond-wire inductances restrict the useful bandwidth to 1 GHz. The amplifier occupies an active area of 0.26 mm/sup 2/ and has been realized in the bipolar part of a 1-/spl mu/m BiCMOS process.</description><subject>Analog integrated circuits</subject><subject>Bandwidth</subject><subject>BiCMOS integrated circuits</subject><subject>Bonding</subject><subject>Broadband amplifiers</subject><subject>Circuit topology</subject><subject>Frequency</subject><subject>Gain</subject><subject>Low voltage</subject><subject>Operational amplifiers</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNqFkM1LAzEQxYMoWKvg2VNO4mVrZrMf6bEVbYWKFwVvSzaZ1Ej2w2SL6F9vdItXT2-G95th5hFyDmwGwObX2SwveFGyAzKBPBcJlPzlkEwYA5HMU8aOyUkIb7HNMgETsl1QSFbrL1rbvnPSU-VkCMliSbsevRxs10pHZdM7ayx6-mGHV9rs3GB7GasWw4CaPljnoqm6psc2_E5R03laFole0q207Sk5MtIFPNvrlDzf3T7drJPN4-r-ZrFJFM_YkBiOujCF1rVSyghAWdd5xnSpRHwri5ICAEfDyhS1rMtMs6LgILBEA6D5lFyOe3vfve_idVVjg0LnZIvdLlSpEClP467_QRA8LeYRvBpB5bsQPJqq97aR_rMCVv1EXmXVGHlEL0bUIuIftje_ASJXe9k</recordid><startdate>199704</startdate><enddate>199704</enddate><creator>de Langen, K.-J.</creator><creator>Eschauzier, R.G.H.</creator><creator>van Dijk, G.J.A.</creator><creator>Huijsing, J.H.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>199704</creationdate><title>A 1-GHz bipolar class-AB operational amplifier with multipath nested Miller compensation for 76-dB gain</title><author>de Langen, K.-J. ; Eschauzier, R.G.H. ; van Dijk, G.J.A. ; Huijsing, J.H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-f3ed6f6ddbcccf81eabb540d7c856347c821113ef072edab74d066318e7ef11d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Analog integrated circuits</topic><topic>Bandwidth</topic><topic>BiCMOS integrated circuits</topic><topic>Bonding</topic><topic>Broadband amplifiers</topic><topic>Circuit topology</topic><topic>Frequency</topic><topic>Gain</topic><topic>Low voltage</topic><topic>Operational amplifiers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>de Langen, K.-J.</creatorcontrib><creatorcontrib>Eschauzier, R.G.H.</creatorcontrib><creatorcontrib>van Dijk, G.J.A.</creatorcontrib><creatorcontrib>Huijsing, J.H.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>de Langen, K.-J.</au><au>Eschauzier, R.G.H.</au><au>van Dijk, G.J.A.</au><au>Huijsing, J.H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A 1-GHz bipolar class-AB operational amplifier with multipath nested Miller compensation for 76-dB gain</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1997-04</date><risdate>1997</risdate><volume>32</volume><issue>4</issue><spage>488</spage><epage>498</epage><pages>488-498</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>A 1-GHz operational amplifier with a gain of 76 dB while driving a 50-/spl Omega/ load is presented. The equivalent input noise voltage is as low as 1.2 nV//spl radic/Hz. This combination of extremely high bandwidth, high gain, and low noise is the result of a three-stage all-n-p-n topology combined with a multipath nested Miller compensation. Using 10-GHz f/sub T/ n-p-n transistors, the realizable bandwidth could be of the order of 2-3 GHz. However, bond-wire inductances restrict the useful bandwidth to 1 GHz. The amplifier occupies an active area of 0.26 mm/sup 2/ and has been realized in the bipolar part of a 1-/spl mu/m BiCMOS process.</abstract><pub>IEEE</pub><doi>10.1109/4.563670</doi><tpages>11</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | IEEE journal of solid-state circuits, 1997-04, Vol.32 (4), p.488-498 |
| issn | 0018-9200 1558-173X |
| language | eng |
| recordid | cdi_ieee_primary_563670 |
| source | IEEE Electronic Library (IEL) |
| subjects | Analog integrated circuits Bandwidth BiCMOS integrated circuits Bonding Broadband amplifiers Circuit topology Frequency Gain Low voltage Operational amplifiers |
| title | A 1-GHz bipolar class-AB operational amplifier with multipath nested Miller compensation for 76-dB gain |
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