Monte Carlo simulation of electron scattering processes by ionized impurity in conductive channels of micro- and nanodevice structures

Monte Carlo simulation of electron scattering processes by ionized impurity in conductive channels of micro- and nanodevice structures

Effective algorithm of polar angle θ selection in semiconductor ionized impurity scattering simulation according to the Ridley model is proposed. As an example, doped bulk silicon angle distribution histograms for various values of impurity concentration N i and various values of electrons energy E...

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Hauptverfasser: Borzdov, V M, Speransky, D S
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Sprache:eng
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Equations
Histograms
Impurities
Mathematical model
Monte Carlo methods
Nickel
Scattering
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creator Borzdov, V M
Speransky, D S
description Effective algorithm of polar angle θ selection in semiconductor ionized impurity scattering simulation according to the Ridley model is proposed. As an example, doped bulk silicon angle distribution histograms for various values of impurity concentration N i and various values of electrons energy E are presented.
doi_str_mv 10.1109/CRMICO.2010.5632933
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subjects Equations
Histograms
Impurities
Mathematical model
Monte Carlo methods
Nickel
Scattering
title Monte Carlo simulation of electron scattering processes by ionized impurity in conductive channels of micro- and nanodevice structures
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