Monte Carlo simulation of electron scattering processes by ionized impurity in conductive channels of micro- and nanodevice structures

Monte Carlo simulation of electron scattering processes by ionized impurity in conductive channels of micro- and nanodevice structures

Effective algorithm of polar angle θ selection in semiconductor ionized impurity scattering simulation according to the Ridley model is proposed. As an example, doped bulk silicon angle distribution histograms for various values of impurity concentration N i and various values of electrons energy E...

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Bibliographische Detailangaben
Hauptverfasser: Borzdov, V M, Speransky, D S
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Equations
Histograms
Impurities
Mathematical model
Monte Carlo methods
Nickel
Scattering
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Beschreibung
Zusammenfassung:Effective algorithm of polar angle θ selection in semiconductor ionized impurity scattering simulation according to the Ridley model is proposed. As an example, doped bulk silicon angle distribution histograms for various values of impurity concentration N i and various values of electrons energy E are presented.
DOI:10.1109/CRMICO.2010.5632933