Broadband monolitic IC on GaAs heterostructures for time quantized control of amplitude and phase of microwave oscillations with inbuilt driver

Broadband monolitic IC on GaAs heterostructures for time quantized control of amplitude and phase of microwave oscillations with inbuilt driver

The results of co-developing of industrial design of monolithic integrated circuits of three types with TTL control on the basis of GaAs heterostructures, operating in the frequency range 8,0 - 12 GHz by the teams of specialists of SPE "Istok", Moscow Institute of Electronic Technology, S....

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Hauptverfasser: Bogdanov, Y M, Dudinov, K V, Gorbatsevich, A A, Yegorkin, V I, Zemlyakov, V Y, Lapin, V G, Petrov, K I, Sapelnikov, A N, Temnov, A M, Shcherbakov, F Y
Format: Tagungsbericht
Sprache:eng ; rus
Schlagworte:
Attenuators
Broadband communication
Electronic mail
Gallium arsenide
Nanotechnology
Oscillators
Switches
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creator Bogdanov, Y M
Dudinov, K V
Gorbatsevich, A A
Yegorkin, V I
Zemlyakov, V Y
Lapin, V G
Petrov, K I
Sapelnikov, A N
Temnov, A M
Shcherbakov, F Y
description The results of co-developing of industrial design of monolithic integrated circuits of three types with TTL control on the basis of GaAs heterostructures, operating in the frequency range 8,0 - 12 GHz by the teams of specialists of SPE "Istok", Moscow Institute of Electronic Technology, S. Petersburg Academic University - REC of Nanotechnologies of Russian Academy of Science are presented: 6-bit active phase switcher; 5-bit attenuator; 2-way switch; Switch operation time -10 ns
doi_str_mv 10.1109/CRMICO.2010.5632545
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subjects Attenuators
Broadband communication
Electronic mail
Gallium arsenide
Nanotechnology
Oscillators
Switches
title Broadband monolitic IC on GaAs heterostructures for time quantized control of amplitude and phase of microwave oscillations with inbuilt driver
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