Analysis and modeling of pseudo-short-channel effects in ZnO-nanoparticle thin-film transistors
Due to the complex nature of the device physics in nanoparticle thin-film transistors (TFT), analytical models for the transistor characteristics are not available for advanced circuit design. The discrepancy between experimental data and the standard MOSFET equations has been neglected up to now, a...
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| creator | Wolff, Karsten Hilleringmann, Ulrich |
| description | Due to the complex nature of the device physics in nanoparticle thin-film transistors (TFT), analytical models for the transistor characteristics are not available for advanced circuit design. The discrepancy between experimental data and the standard MOSFET equations has been neglected up to now, although there are several pseudo-short-channel effects obvious. In this paper, a simple but sufficient model is proposed, which represents the transistor characteristics of ZnO-nanoparticle TFTs by the introduction of two semi-empirical parameters. The model is demonstrated for integrated normally-on and normally-off devices in both linear and saturation regions. |
| doi_str_mv | 10.1109/ESSDERC.2010.5618383 |
| format | Conference Proceeding |
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The discrepancy between experimental data and the standard MOSFET equations has been neglected up to now, although there are several pseudo-short-channel effects obvious. In this paper, a simple but sufficient model is proposed, which represents the transistor characteristics of ZnO-nanoparticle TFTs by the introduction of two semi-empirical parameters. 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The discrepancy between experimental data and the standard MOSFET equations has been neglected up to now, although there are several pseudo-short-channel effects obvious. In this paper, a simple but sufficient model is proposed, which represents the transistor characteristics of ZnO-nanoparticle TFTs by the introduction of two semi-empirical parameters. The model is demonstrated for integrated normally-on and normally-off devices in both linear and saturation regions.</description><subject>Data models</subject><subject>Equations</subject><subject>Mathematical model</subject><subject>Nanoparticles</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>Zinc oxide</subject><issn>1930-8876</issn><isbn>142446658X</isbn><isbn>9781424466580</isbn><isbn>9781424466610</isbn><isbn>1424466601</isbn><isbn>9781424466603</isbn><isbn>142446661X</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2010</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkE1LAzEYhCMqWGt_gR7yB1KTzccmx1LrBxQKtgfxUt7dvLGRbbZs4sF_74KdyzBzeBiGkAfB50Jw97jabp9W78t5xcdGG2GllRdk5morVKWUMUbwS3J7Dtp-XJGJcJIza2tzQ2Y5f_NRSovKmgnZLxJ0vzlmCsnTY--xi-mL9oGeMv74nuVDPxTWHiAl7CiGgG3JNCb6mTYsQepPMJTYdkjLISYWYnekZYA0Iks_5DtyHaDLODv7lOyeV7vlK1tvXt6WizWLjhcWpJeybhGgdbayDdjK1UZ5XVsedNP4VjTCNdor7cfhUoHngL6qnTLKCJRTcv-PjYi4Pw3xCMPv_nyP_AO9KVlM</recordid><startdate>201009</startdate><enddate>201009</enddate><creator>Wolff, Karsten</creator><creator>Hilleringmann, Ulrich</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201009</creationdate><title>Analysis and modeling of pseudo-short-channel effects in ZnO-nanoparticle thin-film transistors</title><author>Wolff, Karsten ; Hilleringmann, Ulrich</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i90t-f3d337ceaac9828ba829764d5780f5bbdc1b19b5d45d51234ad0aed27946461e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Data models</topic><topic>Equations</topic><topic>Mathematical model</topic><topic>Nanoparticles</topic><topic>Threshold voltage</topic><topic>Transistors</topic><topic>Zinc oxide</topic><toplevel>online_resources</toplevel><creatorcontrib>Wolff, Karsten</creatorcontrib><creatorcontrib>Hilleringmann, Ulrich</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wolff, Karsten</au><au>Hilleringmann, Ulrich</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Analysis and modeling of pseudo-short-channel effects in ZnO-nanoparticle thin-film transistors</atitle><btitle>2010 Proceedings of the European Solid State Device Research Conference</btitle><stitle>ESSDERC</stitle><date>2010-09</date><risdate>2010</risdate><spage>226</spage><epage>229</epage><pages>226-229</pages><issn>1930-8876</issn><isbn>142446658X</isbn><isbn>9781424466580</isbn><eisbn>9781424466610</eisbn><eisbn>1424466601</eisbn><eisbn>9781424466603</eisbn><eisbn>142446661X</eisbn><abstract>Due to the complex nature of the device physics in nanoparticle thin-film transistors (TFT), analytical models for the transistor characteristics are not available for advanced circuit design. The discrepancy between experimental data and the standard MOSFET equations has been neglected up to now, although there are several pseudo-short-channel effects obvious. In this paper, a simple but sufficient model is proposed, which represents the transistor characteristics of ZnO-nanoparticle TFTs by the introduction of two semi-empirical parameters. The model is demonstrated for integrated normally-on and normally-off devices in both linear and saturation regions.</abstract><pub>IEEE</pub><doi>10.1109/ESSDERC.2010.5618383</doi><tpages>4</tpages></addata></record> |
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| ispartof | 2010 Proceedings of the European Solid State Device Research Conference, 2010, p.226-229 |
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| subjects | Data models Equations Mathematical model Nanoparticles Threshold voltage Transistors Zinc oxide |
| title | Analysis and modeling of pseudo-short-channel effects in ZnO-nanoparticle thin-film transistors |
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