Silicon photodiodes for high-efficiency low-energy electron detection

Solid-state electron detectors have been fabricated using a p + n silicon photodiode where the p + region is created by a chemical-vapor deposition (CVD) surface doping from diborane B 2 H 6 . The as-obtained nm-deep p-type layer is resistant to conventional metal etchants, which allows elimination...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Šakić, Agata, Nanver, Lis K, Scholtes, T L M, Heerkens, Carel Th H, van Veen, Gerard, Kooijman, Kees, Vogelsang, Patrick
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Boron Detectors Gain measurement Photodiodes Scanning electron microscopy Silicon Surface treatment
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!